Metal-Fill e-Fuse Structure for Lower Programming Current

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Solution Overview

Problem

E-fuses in semiconductor chips require high current for programming and occupy a large area, leading to increased fabrication costs.

Innovation Solution

Incorporating a metal fill structure between the e-fuse and heaters, which facilitates heat transfer and reduces the required programming current by at least 10% and minimizes chip area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional e-fuse structure is used, then programming function is achieved, but high programming current is required and large chip area is occupied

Engineering Contradiction:

Improveprogramming currentVSAvoidchip area

Core Design Contradiction:

Use of energy by moving objectVSArea of stationary object

Solution Approach 1:

A metal fill structure is introduced as an intermediary between the heater and e-fuse. This metal fill acts as a thermal mediator that efficiently conducts heat from the heater to the e-fuse, reducing the energy required for programming while maintaining a compact footprint.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a composite structure combining different materials (metal fill, semiconductor e-fuse, insulator, heater) with complementary properties. The metal fill provides high thermal conductivity, while the semiconductor materials provide electrical functionality, creating a synergistic system that reduces both current requirement and area.

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If e-fuse structure with heaters is used, then dynamic reprogramming is enabled, but fabrication cost increases due to large area

Engineering Contradiction:

Improvedynamic reprogramming capabilityVSAvoidfabrication cost

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The metal fill structure extends vertically between the heater and e-fuse layers, utilizing the third dimension to improve thermal coupling without increasing the lateral footprint. This vertical integration allows compact design while maintaining reprogramming capability.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The metal fill is strategically placed only in the critical region between the heater and e-fuse where thermal transfer is most needed. This localized approach optimizes thermal performance while minimizing material usage and fabrication complexity.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The metal fill structure allows for lower programming current and reduced chip area, enhancing efficiency and cost-effectiveness in e-fuse fabrication.

Implementation Method 1

Incorporating a metal fill structure between the e-fuse and heaters, which facilitates heat transfer

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12388015B2E-fuse with metal fill

Publication Date: 2025.08.12 GLOBALFOUNDRIES US INC

AI summary

The present disclosure relates to semiconductor structures and, more particularly, to an e-fuse with metal fill structures and methods of manufacture. The structure includes: an insulator material; an e-fuse structure on the insulator material; a plurality of heaters on the insulator material and positioned on sides of the e-fuse structure; and conductive fill material within a space between the e-fuse structure and the plurality of heaters.