Composition, method of treating metal-containing film by using the same, and method of preparing semiconductor device by using the composition
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in effectively controlling the etching rate of metal-containing films, which affects the reliability and electrical characteristics of semiconductor devices.
Innovation Solution
A composition comprising an oxidizing agent, an acid, and a selective etching inhibitor, including an ammonium compound and a polymer with a nitrogen-containing repeating unit, is used to treat metal-containing films, allowing for controlled etching and processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching compositions are used on metal-containing films, then etching can be performed, but the etching rate cannot be effectively controlled and damage to the film occurs
Solution Approach 1:
The patent introduces a specific intermediary substance (ammonium metatungstate) that mediates between the etching agents and the metal-containing film. This intermediary controls the etching rate by regulating the interaction between the composition and the film, preventing direct aggressive etching that causes damage while still enabling effective etching processing.
Solution Approach 2:
The patent modifies the chemical parameters of the etching composition by incorporating ammonium metatungstate, which changes the etching characteristics. This parameter change enables precise control over the etching rate and reduces film damage, resolving the contradiction between etching effectiveness and film integrity.
2Productivity
If high etching rate is achieved, then productivity increases, but manufacturing precision deteriorates due to uncontrolled etching
Solution Approach 1:
The ammonium metatungstate acts as a mediator that enables high etching rates while maintaining control. It facilitates rapid etching of the metal-containing film through chemical mechanisms that do not compromise precision, allowing both high productivity and manufacturing precision to be achieved simultaneously.
Solution Approach 2:
By changing the chemical composition parameters to include ammonium metatungstate, the patent achieves a transformation in etching behavior that enables high speed etching with maintained precision, resolving the trade-off between productivity and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively controls the etching rate of metal-containing films, enhancing the reliability and electrical characteristics of semiconductor devices by protecting the film surface and ensuring precise processing.
Implementation Method 1
The composition may include an oxidizing agent, and the acid may include phosphoric acid
Implementation Method 2
the selective etching inhibitor may include an ammonium compound (e.g., ammonium salt) and a polymer having a nitrogen-containing repeating unit
Data Source
AI summary
Provided are a composition, a method of treating a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the composition, the composition including an oxidizing agent, an acid, and a selective etching inhibitor, wherein the selective etching inhibitor includes an ammonium compound and a polymer having a nitrogen-containing repeating unit.