Metal-Film Etching Composition for Selectivity and Low Residue
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Solution Overview
Problem
Existing etching compositions for metal-containing films in semiconductor manufacturing lack effective etching speed, selectivity, and stability, which can impact the reliability and electrical characteristics of semiconductor devices.
Innovation Solution
An etching composition comprising an oxidizing agent, a buffer, and a selective etching inhibitor, including a first compound represented by Formula 1 and a second compound with a ring structure, is used to enhance etching selectivity and efficiency for metal-containing films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching compositions are used for metal-containing films, then the etching process can be performed, but the etching selectivity for adjacent films is insufficient and surface residues remain
Solution Approach 1:
The etching composition is segmented into multiple functional components: an oxidizing agent for controlled oxidation, a buffer for pH stabilization, and a selective etching inhibitor that selectively protects adjacent films. This segmentation allows each component to address specific aspects of the etching process, achieving high selectivity and minimal residues.
Solution Approach 2:
The selective etching inhibitor acts as an intermediary substance that selectively adsorbs onto adjacent films (such as copper or cobalt) to form a protective layer, preventing them from being etched. This intermediary mechanism enables the etching process to selectively remove the metal-containing film while preserving surrounding structures.
2Productivity
If etching composition provides high etching speed, then productivity increases, but etching selectivity for adjacent films deteriorates
Solution Approach 1:
The etching composition utilizes parameter changes, specifically pH control through the buffer system, to optimize the balance between etching speed and selectivity. The buffer maintains the pH within a specific range that enables fast etching of the metal-containing film while the selective inhibitor simultaneously protects adjacent films, achieving both high productivity and precision.
3Productivity
If strong oxidizing agents are used to increase etching efficiency, then etching speed improves, but storage stability of the etching composition decreases
Solution Approach 1:
The buffer component controls the oxidation-reduction potential and pH of the etching composition, creating optimal conditions for etching efficiency while preventing premature oxidation. This parameter control allows the use of effective oxidizing agents without compromising storage stability, as the buffer prevents uncontrolled oxidation reactions during storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching composition achieves improved etching selectivity and productivity, ensuring effective removal of metal-containing films with minimal surface residues and excellent storage stability.
Implementation Method 1
an oxidizing agent
Implementation Method 2
a buffer
Implementation Method 3
a selective etching inhibitor
Data Source
Figure 1
Figure 2~3
AI summary
Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.