Metal-Containing Film Composition for Etch-Resistant Fine Patterning
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Solution Overview
Problem
Conventional resist underlayer films for semiconductor manufacturing lack sufficient dry etching resistance and planarizing properties, especially at high temperatures, which hinders the miniaturization of patterns and leads to defects like voids and peeling during the patterning process.
Innovation Solution
A metal-containing film composition featuring a metal compound with a crosslinking group, such as Ti, Zr, or Hf, coordinated with a ligand that includes a crosslinking group, providing excellent thermosetting properties and stability, even after high-temperature baking, and incorporating silicon-containing organic groups for improved filling and planarizing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photoresist film is thinned to improve resolution for finer patterns, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The patent divides the single photoresist film into two separate layers: a first photoresist film with high etching resistance (using novolak resin) and a second photoresist film with high resolution (using polyhydroxystyrene). This segmentation allows each layer to optimize for its specific function, resolving the contradiction between thickness/etching resistance and resolution.
Solution Approach 2:
The patent creates a composite resist structure by stacking two different photoresist materials with complementary properties. The novolak-based first film provides etching resistance while the polyhydroxystyrene-based second film provides resolution, achieving both requirements simultaneously through material composition.
2Manufacturing precision
If a resin is selected with low light absorption at exposure wavelength to improve resolution, then resolution is improved, but etching resistance is reduced
Solution Approach 1:
The patent segments the resist functionality into two separate resin systems: novolak resin optimized for etching resistance and polyhydroxystyrene optimized for resolution. Each resin can be independently selected and formulated to maximize its specific property without compromise.
Solution Approach 2:
The patent changes the resin composition parameter by using different resin types in different layers. The first layer uses novolak resin (high etching resistance) while the second layer uses polyhydroxystyrene (low light absorption), allowing each layer to have optimal parameters for its intended function.
3Shape
If a photoresist film is made thinner to maintain aspect ratio, then pattern collapse is reduced, but etching resistance is further reduced
Solution Approach 1:
The patent segments the protective and patterning functions into separate layers. The first photoresist film (thicker, novolak-based) provides the necessary etching resistance and mechanical support, while the second photoresist film (thinner, polyhydroxystyrene-based) provides the fine pattern definition, preventing pattern collapse.
Solution Approach 2:
The composite resist structure combines a thicker novolak-based layer for mechanical strength and etching resistance with a thinner polyhydroxystyrene-based layer for fine patterning. This composite approach maintains pattern stability while preserving etching resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables precise transfer of patterns with reduced volume shrinkage and enhanced etching resistance, allowing for the formation of fine patterns on substrates with complex structures without defects like voids or peeling, even on dense portions with high aspect ratios.
Implementation Method 1
the ligand includes a crosslinking group represented by one of the following general formulae (W-1)... the composition is excellent in thermosetting property, and volume shrinkage during baking is small
Implementation Method 2
applying the composition for forming a metal-containing film onto a substrate to be processed, followed by heating to form a metal-containing film
Data Source
AI summary
The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.