Metal-Containing Film Composition for Fine-Pattern Collapse Suppression
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving fine patterning with monolayer photoresist compositions due to reduced resolution and pattern collapse, as well as inadequate etching selectivity and adhesion between resist layers, particularly when using metal-containing films.
Innovation Solution
A composition for forming a metal-containing film comprising a metal compound, a surface modifier, and a solvent, where the surface modifier contains specific repeating units, enhances adhesiveness and prevents pattern collapse, providing high refractive index and antireflective effects under ArF immersion and high-NA exposure conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a photoresist film is thinned to maintain resolution in fine patterning, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The invention divides the single photoresist film into two separate layers: an upper photoresist layer for pattern formation and a lower metal-containing film for etching resistance. This segmentation allows each layer to be optimized independently - the upper layer can be thin for high resolution while the lower layer provides the necessary etching protection during substrate processing.
2Strength
If a metal-containing film is used to improve etching resistance, then etching resistance is improved, but adhesion to resist upper layer film is insufficient
Solution Approach 1:
The metal-containing film incorporates a surface modifier in its upper region that specifically enhances adhesion to the photoresist material. This creates a gradient structure where the lower portion maintains high etching resistance through metal content while the upper portion provides improved adhesion through the surface modifier, allowing both functions to coexist in different local regions of the same film.
3Measurement precision
If novolak resin or polyhydroxystyrene is used to reduce light absorption, then resolution is improved, but etching rate increases under dry etching conditions
Solution Approach 1:
The invention separates the functions of light absorption control and etching rate control into different layers. The upper photoresist layer uses novolak resin or polyhydroxystyrene optimized for low light absorption and high resolution, while the lower metal-containing film provides the necessary etching resistance, effectively isolating the high etching rate material from direct contact with the etching plasma during substrate processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high adhesiveness to resist upper layer films, suppresses fine-pattern collapse, and ensures precise pattern transfer to substrates, with improved etching resistance to oxygen and fluorine gases, suitable for two-layer and three-layer resist processes.
Implementation Method 1
a composition for forming a metal-containing film... provides high refractive index and antireflective effects
Implementation Method 2
the composition achieves high adhesiveness to resist upper layer films
Implementation Method 3
suppresses fine-pattern collapse
Implementation Method 4
improved etching resistance to oxygen and fluorine gases
Data Source
AI summary
The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound; (B) a surface modifier; and (C) a solvent, where the metal compound contains at least one metal atom selected from the group consisting of Ti, Zr, and Hf, and the surface modifier (B) is a polymer containing one or both of a repeating unit represented by the following general formula (1) and a repeating unit represented by the following general formula (2), and the polymer does not contain a repeating unit containing a hydroxy group, where R1 represents a hydrogen atom or a methyl group, R2 represents a monovalent organic group having 2 to 20 carbon atoms and containing a heterocyclic structure, and R3 represents a hydrogen atom or a linear or branched alkyl group having 1 to 3 carbon atoms. This can provide a metal-containing film in which an excellent pattern profile can be achieved and which can suppress fine-pattern collapse.