Metal-Containing Film Work Function via Sequential Gas Supply
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Solution Overview
Problem
Existing semiconductor device manufacturing methods fail to increase the work function of formed films to desired values, particularly for metal films like titanium nitride (TiN), which limits their performance in applications such as enhancing the work function of titanium nitride films.
Innovation Solution
A semiconductor device manufacturing method involving the sequential and alternating supply of metal-containing gases, nitrogen-containing gases, and oxygen-containing or halogen-containing gases into a processing chamber, with controlled durations and cycles, to form a metal-containing film with increased work function, utilizing a substrate processing apparatus equipped with gas supply systems and a controller to manage gas flow and composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CVD methods or simple alternating source material supply are used, then film formation is achieved, but the work function of the formed film remains lower than desired
Solution Approach 1:
The gas supply process is segmented into distinct sequential steps: first supplying metal-containing gas, then nitrogen-containing gas, and finally oxygen-containing or halogen-containing gas. Each gas type is supplied independently in controlled amounts, allowing precise control over film composition and work function without requiring complex simultaneous multi-gas supply systems.
Solution Approach 2:
The invention changes the parameters of gas supply by introducing a three-stage sequential gas supply method with specific duration controls for each stage. By adjusting the supply durations and sequences of different gas types, the film's work function can be precisely tuned to desired values while maintaining manufacturing simplicity.
2Productivity
If multiple gases are supplied simultaneously to form metal-containing film, then film formation efficiency is improved, but control over film composition and work function becomes difficult
Solution Approach 1:
The invention employs periodic action by supplying different gas types in sequential cycles rather than simultaneously. Each gas is supplied for a controlled duration, creating distinct reaction phases that allow precise control over film composition while maintaining continuous film formation efficiency through the cyclic gas supply pattern.
Solution Approach 2:
The metal-containing gas is supplied first as a preliminary action to establish the base film layer, followed by nitrogen-containing gas to modify composition, and finally oxygen-containing or halogen-containing gas to adjust work function. This sequential preliminary action for each gas type ensures precise compositional control while maintaining efficient continuous film formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively increases the work function of the formed films, enhancing their performance without the need for expensive materials, by precisely controlling the gas supply and composition, resulting in films with improved properties like titanium oxynitride (TiON) having higher work functions than titanium nitride (TiN).
Implementation Method 1
One technique of forming a thin film on a substrate is a chemical vapor deposition (CVD) method. The CVD method is a method of forming a film, which is formed of an element included in a source molecule, on a substrate using a reaction of two or more kinds of source materials in a gas phase or on a substrate surface.
Implementation Method 2
there is a technique in which two or more kinds of source materials used in film-forming are alternately supplied onto a substrate one by one and the film forming is controlled in the order of atomic layer using a surface reaction under certain film-forming conditions
Implementation Method 3
The semiconductor device manufacturing method may further include removing the metal-containing gas remaining in the processing chamber after performing the step (a); removing the nitrogen-containing gas remaining in the processing chamber after performing the step (b)
Data Source
AI summary
Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.