Metal Fluoride Chamber Coating for Stable Fluorine Plasma Etching
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Solution Overview
Problem
Semiconductor manufacturing processes face issues such as particle generation, deposition rate drift, etch rate drift, compromised film uniformity, and etch uniformity due to reactions between chamber components and fluorine plasma, leading to defects on wafers.
Innovation Solution
Applying a protective coating of metal fluorides, such as MgxFw, LaxFw, YxMgyFw, or YxLayFw, on chamber components using atomic layer deposition (ALD), chemical vapor deposition (CVD), electron beam ion assisted deposition (EB-IAD), or physical vapor deposition (PVD), to form a low-vapor pressure compound that reduces particle generation and maintains uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chamber components are exposed to fluorine plasma during semiconductor manufacturing, then the plasma etching process can be performed, but reactions occur between chamber components and plasma forming high vapor pressure gases that sublime and deposit on other components causing particles and defects
Solution Approach 1:
A protective coating layer comprising metal fluoride is applied to chamber components as an intermediary barrier between the fluorine plasma and the component material. This coating prevents direct reaction between the plasma and chamber components, thereby eliminating the formation of high vapor pressure gases that cause particle generation and defects during plasma etching processes.
Solution Approach 2:
The protective coating is formed as a composite structure involving metal fluoride compounds deposited on chamber component surfaces. This composite material approach creates a stable, low-vapor-pressure surface layer that resists plasma attack while maintaining the structural integrity of the underlying chamber components during high-energy fluorine plasma exposure.
2Productivity
If chamber components react with fluorine plasma, then the etching process proceeds, but deposition rate drift and etch rate drift occur compromising process uniformity
Solution Approach 1:
The metal fluoride protective coating serves as a stable intermediary layer that maintains consistent surface properties during plasma etching. By preventing direct reaction between fluorine plasma and chamber components, the coating eliminates variable deposition and etch rates, ensuring uniform processing across all chamber surfaces throughout the etching operation.
3Adaptability or versatility
If reactive materials are exposed to fluorine plasma, then plasma processing can occur, but high vapor pressure gases form and deposit on components reducing film uniformity
Solution Approach 1:
The protective metal fluoride coating acts as a mediator that enables plasma processing to proceed while preventing the formation of volatile reaction products. This intermediary layer maintains stable surface composition and low vapor pressure during plasma exposure, ensuring uniform film deposition without the contamination and non-uniformity caused by reactive material degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal fluoride coatings effectively reduce particle generation, minimize deposition rate and etch rate drift, and enhance film and etch uniformity by forming a stable, low-vapor pressure layer that adheres to particles, preventing them from contaminating wafers.
Implementation Method 1
form a low-vapor pressure compound that reduces particle generation and maintains uniformity
Implementation Method 2
depositing, by atomic layer deposition (ALD), chemical vapor deposition (CVD), electron beam ion assisted deposition (EB-IAD), or physical vapor deposition (PVD), a protective coating
Implementation Method 3
depositing, by atomic layer deposition (ALD), chemical vapor deposition (CVD), electron beam ion assisted deposition (EB-IAD), or physical vapor deposition (PVD), a protective coating
Implementation Method 4
depositing, by atomic layer deposition (ALD), chemical vapor deposition (CVD), electron beam ion assisted deposition (EB-IAD), or physical vapor deposition (PVD), a protective coating
Implementation Method 5
adheres to particles, preventing them from contaminating wafers
Data Source
AI summary
Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.