Metal Fluoride Polymer Film for Fluorine Etch-Resistant Masks
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Solution Overview
Problem
The development of semiconductor devices with three-dimensional structures requires a mask pattern that exhibits high resistance to etching gases, particularly those containing fluorine, and enhances the etch rate of the processed substance.
Innovation Solution
A method for manufacturing a metal fluoride-containing organic polymer film by infiltrating an organic polymer film with an organometallic compound and exposing it to hydrogen fluoride, forming a metal fluoride layer that improves etch resistance and etch rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional organic polymer film is used as a mask pattern, then the process is simple, but the resistance to etching gases containing fluorine is insufficient
Solution Approach 1:
The patent creates a composite material by infiltrating an organic polymer film with metal atoms (such as aluminum) to form a metal-containing organic polymer film. This composite structure combines the etch resistance of metal fluorides with the processability of organic polymers, achieving high resistance to fluorine-containing etching gases while maintaining manufacturing feasibility through sequential infiltration and fluorination steps
Solution Approach 2:
The patent changes the chemical composition parameters of the organic polymer film by introducing metal atoms through infiltration with organometallic compounds, then further modifying it through fluorination to create metal fluoride species. This parameter transformation from pure organic polymer to metal-fluorinated composite significantly enhances etch resistance without requiring complete process redesign
2Productivity
If the mask pattern is exposed to etching gas for extended period to achieve high aspect ratio, then the etch rate of processed substance increases, but the mask pattern durability decreases
Solution Approach 1:
The metal-containing organic polymer film creates a composite protective layer where metal fluoride species (formed through fluorination of infiltrated metal atoms) provide exceptional resistance to fluorine-containing etching gases. This allows the mask to withstand extended exposure periods required for high aspect ratio patterning while maintaining structural integrity and protecting the underlying processed substance
Solution Approach 2:
The patent performs preliminary infiltration of metal atoms and subsequent fluorination treatment before the actual etching process. This pre-treatment creates a durable, etch-resistant mask structure that can withstand prolonged exposure to etching gases, enabling high aspect ratio features to be formed without mask degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting film demonstrates enhanced resistance to etching gases containing fluorine, allowing for precise patterning and increased etch rates, especially in high aspect ratio features.
Implementation Method 1
exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound
Implementation Method 2
exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound
Implementation Method 3
exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film
Data Source
AI summary
A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.