Metal Fluoride Polymer Film for CF-Based Etch-Resistant Patterning
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Solution Overview
Problem
Existing techniques for forming patterns with high aspect ratios in semiconductor devices face challenges in providing adequate resistance to etching gases, particularly those containing fluorine, and require improved etch rates for efficient processing.
Innovation Solution
A method involving the infiltration of an organic polymer film with an organometallic compound followed by exposure to hydrogen fluoride to form a metal fluoride-containing organic polymer film, which enhances etch resistance and etch rate by forming metal fluorides with high boiling points and strong metal-fluorine bonds, thereby improving resistance to CF-based etching gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional organic polymer film is used as a mask pattern, then the process is simple and easy to manufacture, but the resistance to CF-based etching gases is insufficient
Solution Approach 1:
The patent applies composite materials by combining an organic polymer film with metal fluoride particles (such as AlF3, SiF4, BF3, GaF3, InF3, or their mixtures) to create a mask pattern with enhanced etch resistance. The metal fluoride content is controlled at 1-50 wt% of the total mask pattern weight, optimizing both protective performance and process feasibility. This composite structure provides superior resistance to CF-based etching gases while maintaining reasonable manufacturing complexity.
Solution Approach 2:
The patent changes the chemical composition parameters of the mask pattern by incorporating specific metal fluorides with high boiling points and strong metal-fluorine bonds. The metal fluoride content is precisely controlled within 1-50 wt%, and the organic polymer matrix is selected from specific types (polymer A, polymer B, or polymer C) to achieve optimal etch resistance while managing process complexity.
2Manufacturing precision
If the mask pattern is exposed to etching gas for extended periods to form high aspect ratio patterns, then the patterning precision is improved, but the etch rate of the mask pattern decreases due to insufficient etch resistance
Solution Approach 1:
The composite mask pattern consisting of organic polymer and metal fluoride particles (AlF3, SiF4, BF3, GaF3, InF3, or mixtures) provides enhanced etch resistance, enabling the mask to withstand extended exposure to CF-based etching gases without excessive erosion. This maintains patterning precision for high aspect ratio features while preserving adequate etch rate through optimized metal fluoride content (1-50 wt%).
Solution Approach 2:
By changing the chemical composition to include metal fluorides with high boiling points and strong metal-fluorine bonds, the mask pattern achieves improved stability against fluorine-based etching gases. The controlled metal fluoride content (1-50 wt%) and selection of specific organic polymers (polymer A, B, or C) optimize the balance between etch resistance and etch rate, enabling precise patterning without excessive exposure time.
3Reliability
If the organic polymer film is infiltrated with organometallic compound and exposed to hydrogen fluoride, then the etch resistance to fluoride radicals and ions is enhanced, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-infiltrating the organic polymer film with organometallic compounds (such as Al(CH3)3, Si(CH3)4, B(CH3)3, Ga(CH3)3, or In(CH3)3) before the etching process. This preliminary infiltration allows the formation of protective metal fluoride layers in advance, enhancing resistance to fluoride radicals and ions during subsequent etching operations. The two-step process (infiltration followed by HF exposure) is performed once to establish long-lasting protection.
Solution Approach 2:
The patent uses organometallic compounds as intermediaries to transfer metal atoms into the organic polymer film. These organometallic compounds (Al(CH3)3, Si(CH3)4, B(CH3)3, Ga(CH3)3, or In(CH3)3) serve as mediators that facilitate the incorporation of metal atoms, which then react with hydrogen fluoride to form protective metal fluoride particles. This intermediary approach enables controlled metal fluoride formation with enhanced etch resistance.
4Reliability
If a mask pattern with high etch resistance is used, then the resistance to CF-based etching gases is improved, but the etch rate of the underlying material may be reduced
Solution Approach 1:
The patent optimizes the metal fluoride content parameter within 1-50 wt% of the total mask pattern weight to balance etch resistance and etch rate. Additionally, specific organic polymers (polymer A, polymer B, or polymer C) are selected to maintain adequate etch rate while providing the necessary protective function. This parameter optimization ensures the mask pattern provides sufficient resistance to CF-based etching gases without excessively reducing the etch rate of the underlying material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves enhanced etch resistance and etch rates, allowing precise patterning and processing of semiconductor devices with complex structures, particularly in high aspect ratio features, using CF-based etching gases.
Implementation Method 1
exposing the organic polymer film to an organometallic compound, thereby infiltrating the organic polymer film with the organometallic compound
Implementation Method 2
exposing the organic polymer film infiltrated with the organometallic compound to a hydrogen fluoride gas, thereby providing a fluoride of the first metal in the organic polymer film
Data Source
AI summary
A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.