Metal Gas Pipe Fluorine Layer for Semiconductor Corrosion

Solution Overview

Problem

The existing methods for manufacturing semiconductor devices face challenges in improving the quality of substrate processing within process containers, particularly due to corrosion and contamination issues caused by ammonia water generated during the film formation process, which affects the quality of the SiOCN film formed on substrates.

Innovation Solution

A technique involving the formation of a continuous fluorine-containing layer on the inner surface of gas supply pipes made of metal, using a fluorine-containing gas to chemically react with the pipe material, thereby preventing corrosion and contamination, and improving the cleanliness of the process container and nozzles before film formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If metal pipes are used for gas supply, then structural strength and durability are improved, but corrosion and contamination occur due to ammonia water generated during film formation

Engineering Contradiction:
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent applies composite materials by forming a fluorine-containing layer on the inner surface of the metal pipe. This creates a composite structure where the metal pipe provides structural strength while the fluorine-containing layer provides corrosion resistance. The fluorine-containing layer acts as a protective coating that prevents direct contact between the metal pipe and corrosive ammonia water, thus resolving the contradiction between structural strength and corrosion resistance.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The fluorine-containing layer serves as an intermediary between the metal pipe and the ammonia water. This intermediate layer prevents the harmful interaction between the metal pipe and corrosive substances while allowing the pipe to maintain its structural function. The fluorine-containing layer acts as a barrier that protects the metal pipe from corrosion without compromising its mechanical properties.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If fluorine-containing layer is formed on gas supply pipes, then corrosion and contamination are prevented, but additional process steps are required

Engineering Contradiction:
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The fluorine-containing layer is formed in advance before the actual film formation process on substrates. This preliminary action ensures that the protective layer is already in place to prevent corrosion and contamination during subsequent processing. By performing the fluorine-containing layer formation as a preparatory step, the system gains corrosion resistance without complicating the main film formation process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The fluorine-containing layer formation process uses the existing gas supply infrastructure to deliver fluorine-containing gas directly to the pipes. The system essentially services itself by using its own gas delivery mechanism to apply the protective coating, reducing the need for additional external equipment or complex processing systems.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the quality of the SiOCN film by preventing corrosion and contamination, reducing particle formation, and maintaining the integrity of the gas supply pipes, thus improving the overall substrate processing quality and productivity.

Implementation Method 1

supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 2

preventing corrosion and contamination, and improving the cleanliness of the process container and nozzles before film formation

Methodology Applied
Scientific EffectCorrosion prevention:

Data Source

PatentUS11728159B2Method of manufacturing semiconductor device, surface treatment method, substrate processing apparatus, and recording medium
Publication Date: 2023.08.15
  • US11728159B2 patent drawing
  • US11728159B2 patent drawing
  • US11728159B2 patent drawing

AI summary

There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying an oxygen-containing gas from a pipe made of metal to the substrate in the process container; supplying a nitrogen-and-hydrogen-containing gas from the pipe to the substrate in the process container; and (b) forming a layer on an inner surface of the pipe by supplying a surface treatment gas into the pipe such that the surface treatment gas chemically reacts with the inner surface of the pipe.