Metal Gate Layout With Dummy End Gates to Prevent Pattern Leaning
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Solution Overview
Problem
As integrated circuit devices become more densely integrated, the miniaturization of line patterns leads to increased aspect ratios, making them prone to leaning, which can result in bridges between adjacent gate patterns or other components, disrupting the connection between the source/drain region and the circuit gate pattern.
Innovation Solution
The integration of a metal gate structure with dummy gate patterns connected to both ends of gate pillars, forming an integral body, prevents leaning by ensuring both ends of line patterns are securely connected to gate pillars, thereby maintaining the integrity of the circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the size of integrated circuit devices is reduced to increase degree of integration, then the degree of integration is improved, but the aspect ratio of line patterns increases making them prone to leaning
Solution Approach 1:
The patent applies preliminary action by forming dummy gate patterns at both ends of gate patterns before the main gate pattern formation. These dummy gate patterns serve as pre-positioned structural supports that prevent leaning during subsequent miniaturization processes. The dummy gates are formed in advance to provide mechanical stability to the gate structure, addressing the leaning issue before it manifests in the final device.
Solution Approach 2:
The dummy gate patterns act as intermediary elements between the gate pillar and the main gate pattern. These intermediary structures provide additional support points that distribute mechanical stress and prevent the main gate pattern from leaning. The dummy gates serve as mediating structural elements that bridge the gap between the rigid gate pillar and the vulnerable miniaturized gate lines.
2Quantity of substance
If line patterns are miniaturized to increase integration density, then the degree of integration is improved, but bridges may form between adjacent gate patterns disrupting connections
Solution Approach 1:
The dummy gate patterns are formed in advance at strategic positions adjacent to the main gate patterns. This preliminary positioning creates physical barriers that prevent bridge formation between miniaturized gate patterns. By establishing these protective structures before the miniaturization process completes, the patent proactively prevents connection disruptions rather than addressing them afterward.
Solution Approach 2:
The patent converts the potential harm of miniaturization-induced bridging into a benefit by using the same miniaturization process to create precisely positioned dummy gate patterns. These dummy patterns, which could be seen as additional complexity, actually serve to protect the main gate patterns from bridging failures. The miniaturization process that causes the problem also enables the precise placement of the protective dummy structures.
3Manufacturing precision
If dummy gate patterns are added to both ends of gate patterns, then leaning is prevented, but device complexity increases
Solution Approach 1:
The dummy gate patterns are merged with the main gate pattern formation process, using the same materials and deposition techniques. Rather than adding separate complex structures, the dummy gates are integrated into the existing gate fabrication workflow. This merging approach minimizes the increase in device complexity while still providing the necessary structural support to prevent leaning.
Solution Approach 2:
The dummy gate patterns serve multiple functions: they provide structural support to prevent leaning, act as anchors for the gate pattern alignment, and serve as placeholders for subsequent processing steps. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity while achieving multiple objectives with a single design element.
Data Source
AI summary
An integrated circuit device may include fin-type active regions protruding from a surface of a substrate and extending in a first horizontal direction, at least one gate pillar on the substrate and extending in the first horizontal direction, and a plurality of gate groups arranged in a second horizontal direction on the plurality of fin-type active regions. Each of the plurality of gate groups may include a plurality of gate patterns spaced apart from each other in the second horizontal direction. Each of the plurality of gate patterns may extend in the second horizontal direction. The plurality of gate patterns each may include at least one dummy gate pattern on at least one end of a corresponding one of the plurality of gate groups in the second horizontal direction. The at least one dummy gate pattern may be in contact with and connected to the at least one gate pillar.