Metal Gettering Structures for Semiconductor Contamination Control

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Solution Overview

Problem

Semiconductor substrates face contamination issues due to materials processing steps and electronic circuitry, which can degrade their electrical properties, and existing gettering methods often require harsh treatments that reduce mechanical stability.

Innovation Solution

Incorporating metal structures within the semiconductor substrate at a spaced distance from contaminants to transport and concentrate them, using metals like platinum, aluminum, or gold, which can be disposed through apertures or embedded using ion implantation, to effectively remove contaminants and modify material behavior within the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If harsh treatments are applied to the entire semiconductor substrate to getter contamination, then contamination removal is improved, but mechanical stability is reduced

Engineering Contradiction:
Improvecontamination removalVSAvoidmechanical stability
Core Design Contradiction:
Object-affected harmful factorsVSStrength

Solution Approach 1:

The substrate surface is divided into localized treated regions rather than treating the entire substrate. Metal structures are formed in specific localized areas to getter contamination, while the rest of the substrate remains intact and maintains its mechanical stability. This segmentation allows contamination removal in critical areas without compromising overall substrate strength.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are given different properties: treated regions with metal structures have high contamination-gettering capability, while untreated regions maintain original mechanical properties. The metal structures are strategically placed in localized areas where contamination is most problematic, creating local quality enhancement without global structural compromise.

Inventive Principle:
Principle #3Local quality

2Object-affected harmful factors

If metal structures are disposed close to electronic circuitry to effectively getter contaminants, then contamination control is improved, but risk of interfering with circuitry functionality is increased

Engineering Contradiction:
Improvecontamination controlVSAvoidcircuitry functionality
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

Metal structures serve as intermediary elements positioned between the contamination sources and the electronic circuitry. These metal structures attract and trap contaminants through diffusion, acting as a protective barrier that prevents contaminants from reaching the circuitry. The spaced distance maintains circuit integrity while the metal structures effectively intercept contaminant pathways.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The metal structures utilize the natural diffusion tendency of contaminants to convert a harmful process (contaminant migration) into a beneficial one (contaminant attraction to metal structures). By positioning metal structures at strategic locations, contaminants are naturally drawn toward these structures rather than toward sensitive circuitry, transforming the contaminant's inherent mobility from a threat to a solution.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for controlled transportation and concentration of contaminants, reducing substrate contamination and enhancing the stability and performance of semiconductor devices by effectively managing contaminant diffusion and localization, thereby improving the reliability of semiconductor-based electronic devices.

Implementation Method 1

materials within electronic circuitry 120, and in particular conductive electrodes or interconnects 121, may diffuse into substrate 110 as contamination 130

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

the backside of the substrate may be exposed to a source of phosphorous so as to generate dislocations within the crystal structure of the substrate that may getter contaminants away from the circuitry-side of the substrate

Methodology Applied
Scientific EffectGettering: Gettering

Implementation Method 3

the contaminant may diffuse through the semiconductor substrate and may interfere with operation of the electronic circuitry in the absence of the metal structure

Methodology Applied
Scientific EffectDiffusion: Diffusion

Data Source

PatentUS9324579B2Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
Publication Date: 2016.04.26 AEROSPACE CORP
  • US9324579B2 patent drawing
  • US9324579B2 patent drawing
  • US9324579B2 patent drawing

AI summary

Embodiments of the present invention provide metal structures for transporting or gettering materials disposed on or within a semiconductor substrate. A structure for transporting a material disposed on or within a semiconductor substrate may include a metal structure disposed within the semiconductor substrate and at a spaced distance from the material. The metal structure is configured to transport the material through the semiconductor substrate and to concentrate the material at the metal structure. The material may include a contaminant disposed within the semiconductor substrate, e.g., that originates from electronic circuitry on the substrate.