Metal Hard Mask Etching via Electroless Plating
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Solution Overview
Problem
Current etching processes for semiconductor wafers, particularly for forming vias and other structures, face challenges in minimizing feature geometries and reducing maintenance and repair frequencies of etching equipment, leading to increased costs and reduced throughput.
Innovation Solution
A method involving the formation of a metal hard mask on the wafer using electroless plating, patterning, and etching to define features such as through-wafer vias, which reduces the need for photoresist masks and subsequent cleaning, thereby minimizing equipment maintenance and improving processing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If photoresist masks are used in conventional etching processes, then feature patterning can be achieved, but equipment maintenance frequency increases and throughput decreases
Solution Approach 1:
The patent extracts and removes the photoresist mask from the etching process, replacing it with a metal hard mask layer that is etched away with the substrate. This eliminates the need for photoresist application, patterning, and removal steps, thereby reducing equipment maintenance frequency and improving throughput while maintaining feature patterning capability
Solution Approach 2:
Instead of using a removable photoresist mask that requires separate application and removal steps, the patent inverts the approach by using a metal hard mask that is permanently integrated into the etching process and removed together with the substrate material, thereby simplifying the overall process flow
2Manufacturing precision
If conventional etching processes are used, then features can be formed on the wafer, but feature geometry minimization is limited
Solution Approach 1:
The patent changes the material parameter of the mask from photoresist to metal, which fundamentally alters the etching characteristics. The metal hard mask provides superior etch selectivity and anisotropy, enabling precise formation of smaller feature dimensions with reduced sidewall etching, thereby improving manufacturing precision without sacrificing processing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the precise formation of smaller feature dimensions with reduced sidewall etching, improving the anisotropy of the etch process and decreasing the frequency of etcher cleaning, thus enhancing throughput and reducing manufacturing costs.
Implementation Method 1
forming a metal hard mask on the wafer using electroless plating
Data Source
AI summary
Etched wafers and methods of forming the same are disclosed. In one embodiment, a method of etching a wafer is provided. The method includes forming a metal hard mask on the wafer using electroless plating, patterning the metal hard mask, and etching a plurality of features on the wafer using an etcher. The plurality of featured are defined by the metal hard mask.