Metal Interconnect Liner Segmentation for Short-Circuit Prevention
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Solution Overview
Problem
As semiconductor technology advances, the need for increased element density and reduced feature sizes poses challenges in the lithography process for forming metal interconnect liners, particularly in reducing the distance between collinear interconnect wires to prevent short-circuit issues due to small spacing among metal interconnect liners.
Innovation Solution
A method involving forming metal interconnect liners on a substrate, covering them with a mask layer, creating openings to expose the liners, and etching to isolate them, using techniques like RIE dry etching or laser ablation, followed by filling deep trenches with insulating materials to reduce spacing and prevent short-circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If traditional lithography process is used to form metal interconnect liners, then the process is simple and well-established, but the distance between collinear interconnect wires cannot be sufficiently reduced and short-circuit problems occur
Solution Approach 1:
The patent applies segmentation by dividing the interconnect wire formation into multiple stages: first forming continuous metal interconnect liners, then using a mask layer with openings to selectively etch and disconnect portions of these liners. This segmentation approach allows the distance between collinear interconnect wires to be reduced while maintaining isolation through the insulating walls formed by the etching process, thereby preventing short-circuits.
Solution Approach 2:
The patent introduces a mask layer as an intermediary element between the lithography process and the final interconnect structure. This mask layer with patterned openings serves as a mediator that enables precise control over where metal liners are disconnected, allowing reduced spacing between wires while ensuring proper isolation through the insulating walls created during the etching process.
2Area of moving object
If feature sizes are downscaled to increase element density, then chip area is reduced, but short-circuit problems increase due to smaller spacing among metal interconnect liners
Solution Approach 1:
The segmentation principle is applied by first forming continuous metal interconnect liners across the chip, then using the mask layer with openings to disconnect these liners at specific locations. This allows the chip area to be reduced through downscaling while maintaining reliable isolation between adjacent interconnect wires through the insulating walls formed during the etching process, preventing short-circuits even at smaller spacings.
Solution Approach 2:
The patent applies preliminary action by forming the complete set of metal interconnect liners before performing the disconnection step. The mask layer is then used to selectively remove portions of these pre-formed liners, creating isolated segments with insulating walls between them. This preliminary formation followed by selective removal allows for reduced spacing while ensuring proper isolation is achieved.
3Reliability
If multiple process steps are used to isolate metal interconnect liners, then isolation is achieved, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent merges multiple functions into a single integrated process step. The mask layer formation and subsequent etching process simultaneously achieve both the disconnection of metal interconnect liners and the formation of insulating walls between them. This combined approach eliminates the need for separate isolation steps, reducing manufacturing process complexity while ensuring reliable isolation of the liners.
Solution Approach 2:
The mask layer serves multiple functions: it acts as a protective layer during processing, defines the pattern for disconnection through its openings, and enables the formation of insulating walls during the etching process. This multi-functional approach reduces the number of separate process steps needed to achieve both disconnection and isolation of metal interconnect liners, simplifying the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively shortens the distance between adjacent metal interconnect liners, saves device area, and suppresses short-circuit problems by isolating the liners through a single mask etching process, enhancing the manufacturing efficiency and reliability of semiconductor structures.
Implementation Method 1
The etching method in step c) may be RIE dry etching, laser ablation, electron beam etching or focused ion beam etching.
Implementation Method 2
The etching method in step c) may be RIE dry etching, laser ablation, electron beam etching or focused ion beam etching.
Implementation Method 3
The etching method in step c) may be RIE dry etching, laser ablation, electron beam etching or focused ion beam etching.
Implementation Method 4
The etching method in step c) may be RIE dry etching, laser ablation, electron beam etching or focused ion beam etching.
Data Source
AI summary
The present invention provides a method for manufacturing a semiconductor structure, comprising: a) forming metal interconnect liners on a substrate; b) forming a mask layer to cover the metal interconnect liners and forming openings, which expose the metal interconnect liners, on the mask layer; c) etching and disconnecting the metal interconnect liners via the openings, thereby insulating and isolating the metal interconnect liners. The present invention further provides a semiconductor structure, which comprises a substrate and metal interconnect liners, wherein ends of the metal interconnect liners are disconnected by insulating walls formed within the substrate. The structure and the method provided by the present invention are favorable for shortening distance between ends of adjacent metal interconnect liners, saving device area and suppressing short circuits happening to metal interconnect liners.