Metal Interconnection Protective Layer Oxygen Gradient
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Solution Overview
Problem
In semiconductor manufacturing, the existing protective layers in metal interconnection structures are either too thick, which hinders miniaturization, or require multiple deposition processes to achieve a low dielectric constant, complicating the fabrication process.
Innovation Solution
A surface treatment process using ozone is applied to introduce oxygen into a part of the protective layer, specifically a single-layered structure made of materials like silicon carbide or silicon carbonitride, reducing the dielectric constant without thickening the layer, thereby simplifying the process and improving adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the protective layer is increased to improve the barrier effect, then the barrier effect is improved, but the protective layer becomes too thick which is unfavorable for miniaturization
Solution Approach 1:
The protective layer is designed with non-uniform oxygen distribution, creating regions with different dielectric constants within the same layer. This allows the layer to maintain adequate thickness for miniaturization while achieving the desired barrier effect through localized property variations rather than uniform thickness increase
Solution Approach 2:
The invention changes the chemical composition parameter of the protective layer by introducing oxygen through surface treatment processes. This modifies the dielectric constant and barrier properties of the layer without changing its physical thickness, thereby resolving the contradiction between maintaining barrier effectiveness and enabling miniaturization
2Reliability
If multiple deposition processes are used to achieve low dielectric constant, then the dielectric constant is reduced, but the fabrication process becomes complicated
Solution Approach 1:
The invention combines the protective layer formation and dielectric constant modification into a single deposition process followed by surface treatment. Instead of using multiple separate deposition processes to achieve low dielectric constant, the oxygen introduction step modifies an already-formed protective layer, merging multiple functions into fewer process steps
Solution Approach 2:
The protective layer is first deposited with standard properties, then subsequently modified through surface treatment to achieve the desired low dielectric constant. This preliminary formation followed by targeted modification approach simplifies the overall process compared to attempting to deposit the final composition directly or using multiple sequential deposition processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the dielectric constant of the protective layer, lowering the resistance of the metal interconnection structure while maintaining a predetermined thickness, thus supporting miniaturization efforts and simplifying manufacturing.
Implementation Method 1
The surface treatment process includes introducing a reactive gas such as ozone (O3) on the surface of the protective layer, for diffusing oxygen (O) into the protective layer
Implementation Method 2
A surface treatment process is performed on the protective layer to add oxygen (O) into a part of the protective layer
Data Source
AI summary
A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).