Metal Inverse Opal Thermal Management for Power Electronics
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Solution Overview
Problem
Conventional heat sinks and cooling structures in power electronics devices are inadequate for managing high operating temperatures due to increased heat generation, and they require additional bonding layers that add thermal resistance, making thermal management challenging.
Innovation Solution
The method involves forming a metal inverse opal structure by depositing metal onto a porous polymer support, removing the support to create a bonding layer between a semiconductor device and a substrate, and adding a cap layer to form a thermally conductive and electrically conductive assembly that provides internal cooling and thermal stress compensation without additional interface layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional heat sinks and cooling structures are used, then heat removal capability is provided, but additional bonding layers and thermal interface materials are required which add substantial thermal resistance
Solution Approach 1:
The patent combines the cooling structure with the substrate by directly bonding the heat sink to the semiconductor device substrate, eliminating the need for separate bonding layers and thermal interface materials. This integration reduces thermal resistance while simplifying the overall device structure.
Solution Approach 2:
The substrate serves multiple functions: it provides mechanical support for the semiconductor device and simultaneously acts as a heat sink for thermal management. This multi-functionality eliminates the need for separate cooling components and their associated bonding layers.
2Power
If power electronics devices operate at increased power levels, then higher power output is achieved, but more heat is generated that conventional heat sinks cannot adequately remove
Solution Approach 1:
The patent changes the thermal parameters of the substrate by using materials with high thermal conductivity and optimizing the substrate's thermal mass and geometry. This enables the substrate to effectively dissipate the increased heat generated by high-power operation.
Solution Approach 2:
The patent employs composite material structures combining the semiconductor device with a thermally conductive substrate material that has superior heat dissipation properties, enabling effective thermal management at high power levels.
3Strength
If additional bonding layers and thermal interface materials are added, then bonding between components is achieved, but thermal management becomes challenging due to increased thermal resistance
Solution Approach 1:
The patent merges the bonding function and thermal conduction function into a single integrated substrate structure, eliminating the need for separate bonding layers and thermal interface materials that would increase thermal resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces thermal resistance and manages thermally-induced stresses, providing efficient heat removal and electrical conductivity within the power electronics assembly, enhancing the thermal management of high-power semiconductor devices.
Implementation Method 1
removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween
Implementation Method 2
electrodepositing metal onto and within the polymer support thereby bonding the semiconductor device to the polymer support
Implementation Method 3
providing efficient heat removal and electrical conductivity within the power electronics assembly
Implementation Method 4
Cooling fluid may be used to receive heat generated by the power semiconductor device by convective thermal transfer, and remove such heat from the power semiconductor device
Data Source
AI summary
Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.