Metal-Layer Etching Composition for Molybdenum Rate Control
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in effectively controlling the etching rates of metal-containing layers, particularly those containing molybdenum, which can impact device reliability and electrical characteristics.
Innovation Solution
A composition comprising an oxidizing agent, an acid, and an etching controller, represented by specific compounds, is used to treat metal-containing layers, controlling their etching rates and preventing excessive etching of molybdenum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching compositions are used on metal-containing layers, then etching process can be performed, but etching rate control is insufficient and excessive etching damage occurs
Solution Approach 1:
The patent introduces a specific etching controller compound (containing hydroxyl or thiol groups with alkyl chains) as an intermediary substance that mediates between the etching agents and the metal-containing layer. This compound adsorbs onto the metal surface and regulates the etching reaction, preventing excessive etching damage while maintaining effective etching rates for semiconductor device manufacturing.
Solution Approach 2:
The patent modifies the chemical composition parameters of the etching solution by incorporating specific etching controllers with defined molecular structures (Formula 1 with specific X1, X2, L1, m, R1, R2 parameters). These parameter changes in the composition enable precise control over etching rates and reduce etching damage to metal-containing layers.
2Manufacturing precision
If etching processes are performed on metal-containing layers, then layer patterning is achieved, but device reliability deteriorates due to component damage
Solution Approach 1:
The etching controller compound serves as a protective intermediary that allows patterning to proceed while shielding the metal-containing layer components from excessive damage. This mediator enables the etching process to achieve necessary patterning precision without compromising device reliability.
3Productivity
If standard etching compositions are used, then processing can be completed, but etching rate uniformity across different metal layers is poor
Solution Approach 1:
The etching controller compound exhibits universal functionality across different metal-containing layers (such as molybdenum, tungsten, copper, and their nitrides/oxides). The compound's molecular structure (Formula 1 with variable parameters) allows it to effectively regulate etching rates uniformly across multiple metal layer types, enabling consistent processing efficiency and precision throughout the semiconductor device manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively manages etching rates, enhancing the quality of semiconductor devices by minimizing damage to metal-containing layers, thereby improving reliability and electrical performance.
Implementation Method 1
an oxidizing agent
Implementation Method 2
an acid
Data Source
AI summary
Provided are a composition, a method of treating a metal-containing layer by using the same, and/or a method of manufacturing a semiconductor device by using the same. The composition may include an oxidizing agent, an acid, and an etching controller, wherein the etching controller may include at least one compound represented by Formula 1:A description of Formula 1 is provided in the specification of the present application.