Optoelectronic Device Metal Layer Pattern Negative Dielectric Constant
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Solution Overview
Problem
Current optoelectronic devices face limitations in achieving improved optical absorbance and efficiency, particularly in the design of photoelectric conversion layers and buffer layers, which affect the performance of devices such as image sensors and solar cells.
Innovation Solution
The optoelectronic device incorporates a metal layer pattern with a negative dielectric constant and a buffer layer composed of silicon nitride or silicon oxynitride, optimized in stoichiometric ratios and phosphorus content, to enhance optical absorbance and efficiency by maximizing the surface plasmon phenomenon and reducing dark current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional buffer layer and photoelectric conversion layer structure is used, then the device structure is simple, but the optical absorbance and efficiency are insufficient
Solution Approach 1:
The patent employs a composite structure consisting of a metal layer pattern (silver, gold, or aluminum), a buffer layer (silicon nitride or silicon oxynitride), and a photoelectric conversion layer. This composite material system enables enhanced optical absorbance through surface plasmon resonance while maintaining a manageable device structure. The specific combination of materials with different dielectric properties creates the necessary conditions for improving efficiency without excessive complexity.
Solution Approach 2:
The patent optimizes specific parameters including the dielectric constant of the buffer layer (0.1 to 12), the pattern size of the metal layer (5 nm to 500 nm), and the thickness of the buffer layer (1 nm to 30 nm). By carefully controlling these parameters, the device achieves maximum optical absorbance enhancement through surface plasmon resonance while keeping the structural complexity within acceptable limits.
2Use of energy by moving object
If the metal layer pattern and buffer layer are optimized for surface plasmon phenomenon, then optical absorbance increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies a pattern size range of 5 nm to 500 nm for the metal layer pattern, which provides a reasonable manufacturing window. Additionally, the buffer layer thickness is controlled within 1 nm to 30 nm and the dielectric constant within 0.1 to 12. These parameter ranges are designed to be achievable with conventional semiconductor manufacturing techniques while still enabling effective surface plasmon resonance for enhanced optical absorbance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases optical absorbance and efficiency, as demonstrated by improved external quantum efficiency and reduced noise in image sensors, while maintaining photoelectric conversion efficiency.
Implementation Method 1
The metal layer pattern includes a metal having a negative dielectric constant... to enhance optical absorbance and efficiency by maximizing the surface plasmon phenomenon
Data Source
AI summary
Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0<x<1), silicon oxynitride (SiOyNz, 0<y<0.5, 0<z≤1), P-doped silicon oxynitride (SiOyNz:P, 0<y<0.5, 0<z≤1), and a combination thereof.