Metal-Layer Treatment Composition for Selective Etching and Cleaning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing processes fail to effectively address the etching and cleaning needs of metal-containing layers in semiconductor devices, resulting in residues and defects in the metal-containing layers, which are not adequately addressed by existing semiconductor manufacturing processes.
Innovation Solution
A composition comprising an oxidizer, an ammonium-based buffer, and an etching controller is utilized to oxidizer, which is used to treat metal-containing layers in semiconductor devices, which are used to effectively address the metal-containing layers, comprising an oxidizer, an ammonium-based buffer, and an etching controller to address the metal-containing layers, which are used to effectively address the metal-containing layers, comprising an oxidizer, an ammonium-based buffer, and an etching controller.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing treatment processes are used on metal-containing layers, then the manufacturing process can be completed, but residues and defects remain on the metal-containing layers
Solution Approach 1:
The patent modifies the chemical composition parameters of the treatment solution by incorporating specific oxidizers, complexing agents, and surfactants in optimized concentrations. This changes the chemical reactivity and cleaning parameters to effectively remove residues from metal-containing layers without causing damage, thereby improving both reliability and manufacturing precision
Solution Approach 2:
The patent uses a composite treatment solution containing multiple functional components (oxidizers, complexing agents, surfactants) that work synergistically. The oxidizer removes organic residues, the complexing agent binds to metal ions to prevent re-deposition, and the surfactant reduces surface tension for better wetting and residue removal, collectively achieving superior cleaning performance and device reliability
2Manufacturing precision
If etching processes are performed on metal-containing layers, then the layer can be patterned, but the layer may be damaged
Solution Approach 1:
The patent adjusts the pH, temperature, and chemical composition parameters of the treatment solution to achieve selective etching of unwanted materials while preserving the metal-containing layer. By controlling these parameters, the solution etches oxides and residues without attacking the underlying metal layer, maintaining both etching precision and layer integrity
Solution Approach 2:
The treatment solution acts as an intermediary between the etching process and the metal-containing layer. It selectively removes unwanted materials through chemical reactions while the complexing agents and surfactants protect the metal layer from damage, enabling precise patterning without compromising structural integrity
3Manufacturing precision
If cleaning processes are applied to remove residues, then the surface can be cleaned, but the etching rate may be insufficient
Solution Approach 1:
The treatment solution is designed to perform multiple functions simultaneously: it cleans residues through oxidation and surfactant action, etches unwanted materials through selective chemical reactions, and protects the metal layer through complexing agents. This multi-functionality achieves both excellent cleaning ability and sufficient etching rate in a single process step
Solution Approach 2:
The patent combines cleaning and etching functions into a single unified treatment solution. The oxidizer and surfactant components provide cleaning action while the acidic components provide etching capability, and both functions operate simultaneously on the metal-containing layer, achieving improved productivity without sacrificing cleaning performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively etches and cleans metal-containing layers, reducing residues and defects, thereby improving semiconductor device reliability and performance.
Implementation Method 1
a composition comprising an oxidizer, an ammonium-based buffer, and an etching controller
Data Source
AI summary
Provided are a composition, a method of treating a metal-containing layer by using the same, and a method of manufacturing a semiconductor device by using the same, the composition including an oxidizer, an ammonium-based buffer, and an etching controller, wherein the etching controller includes a compound represented by Formula 1.