Metal-Ligand Film Composition for Stable Pattern Etch Resistance
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Solution Overview
Problem
Existing methods for forming films and patterns in semiconductor manufacturing using hydrolytic condensation products of metal alkoxides face challenges in storage stability, embedding properties, and etching resistance, leading to issues with film thickness variation and pattern collapse.
Innovation Solution
A composition comprising a metal compound with a specific ligand and solvent is used to form films and patterns, enhancing storage stability, embedding properties, and etching resistance, with improved removability and solubility in organic solvents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If hydrolytic condensation products of metal alkoxides are used to form films, then film formation is achieved, but storage stability deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the composition by using metal compounds with specific ligands (beta-diketonate, beta-dioxo, or alpha-diketonate ligands) instead of conventional hydrolytic condensation products. This parameter change in the chemical structure provides both storage stability and reliable film formation, resolving the contradiction between these two requirements.
2Manufacturing precision
If hydrolytic condensation products of metal alkoxides are used, then film formation is achieved, but embedding properties worsen
Solution Approach 1:
The patent modifies the chemical composition parameters by selecting specific metal compounds with organic ligands (beta-diketonate, beta-doxo, or alpha-diketonate). This composition change improves embedding properties while maintaining reliable film formation, resolving the contradiction between manufacturing precision and reliability.
3Object-affected harmful factors
If hydrolytic condensation products of metal alkoxides are used, then film formation is achieved, but etching resistance deteriorates
Solution Approach 1:
The patent changes the chemical composition to use metal compounds with specific ligand structures (beta-diketonate, beta-dioxo, or alpha-diketonate). This compositional parameter change enhances etching resistance while maintaining reliable film formation, resolving the contradiction between resistance to harmful factors and formation reliability.
4Manufacturing precision
If conventional film forming methods are used, then film formation is achieved, but film thickness variation increases
Solution Approach 1:
The patent changes the compositional parameters by using metal compounds with specific ligands that provide better coating characteristics. This results in reduced film thickness variation and improved uniformity without requiring complex coating process modifications, resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of films and patterns with superior coating-film-thickness-inhibiting properties, resistance to oxygen-based etching, and removability, facilitating easy removal from substrates and reducing pattern collapse.
Implementation Method 1
a film is formed from the composition
Implementation Method 2
The organic resist film is exposed to a radioactive ray
Implementation Method 3
An organic-underlayer-film-reverse-pattern-forming film is formed on the organic-underlayer-film pattern by applying an organic-underlayer-film-reverse-pattern-forming composition
Data Source
AI summary
A composition includes: a metal compound including a ligand; and a solvent. The ligand is derived from a compound represented by formula (1). L represents an oxygen atom or a single bond; R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms; R2 and R3 each independently represent a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, or R2 and R3 bind with each other and represent an alicyclic structure having 3 to 20 ring atoms together with the carbon atom to which R2 and R3 bond, or R1 and either R2 or R3 bind with each other and represent a lactone ring structure having 4 to 20 ring atoms or a cyclic ketone structure having 4 to 20 ring atoms together with the atom chain to which R1 and either R2 or R3 bond.


