Metal-Containing Mask Promoter for Selective EUV Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for selective deposition on metal-containing resists in microelectronic device fabrication, such as metal-oxide resists, face challenges due to non-selectivity and damage during etching processes, leading to issues like feature instability and pattern destruction.
Innovation Solution
A two-step process involving a promoter treatment to functionalize metal-containing mask surfaces and a subsequent selective deposition step using a precursor, which selectively deposits materials on the functionalized mask surfaces while minimizing deposition on exposed underlayer surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective deposition is performed on metal-containing resists using conventional methods, then deposition may occur on undesired surfaces, but selectivity is lost and feature stability deteriorates
Solution Approach 1:
The patent introduces an intermediary layer or surface modification technique that mediates between the deposition process and the metal-containing resist. This intermediary mechanism enables selective deposition on desired surfaces while preventing deposition on undesired surfaces, thereby achieving both selectivity and feature stability simultaneously
2Measurement precision
If conventional photoresists are used in EUV lithography, then optical resolution is improved, but sensitivity deteriorates due to low absorption coefficients
Solution Approach 1:
The patent employs composite material structures that combine materials with high EUV absorption coefficients with materials that provide the necessary optical resolution. This composite approach allows the photoresist to simultaneously achieve improved sensitivity through enhanced absorption and maintained optical resolution, overcoming the limitations of conventional single-material photoresists
3Productivity
If feature sizes are reduced to increase device density, then manufacturing capacity is improved, but feature stability deteriorates due to decreased dimensionality
Solution Approach 1:
The patent utilizes parameter changes in the deposition process, such as controlling deposition thickness, composition, and structural properties, to enhance feature stability even at reduced dimensions. By carefully adjusting these parameters, the deposited material provides mechanical support and stability to smaller features, enabling increased device density without sacrificing feature integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances feature stability and smooths mask features, mitigating stochastically-driven irregularities, and facilitates improved pattern transfer in EUV lithography, compatible with current process flows.
Implementation Method 1
adsorbing a ligand at metal sites of a patterned metal-containing photoresist to form functionalized photoresist surfaces
Implementation Method 2
selectively depositing a material on the functionalized photoresist surfaces by exposing the functionalized photoresist surfaces and the metal-free underlayer to a precursor
Data Source
AI summary
A method of selective deposition on a metal-containing mask using a promoter includes treating metal-containing mask surfaces and exposed surfaces of a metal-free underlayer with the promoter to form functionalized mask surfaces, and treating the functionalized mask surfaces and the exposed surfaces of the metal-free underlayer with a precursor to selectively deposit a material on the functionalized mask surfaces. The promoter is configured to selectively functionalize the metal-containing mask surfaces to form the functionalized mask surfaces. The promoter is further configured to promote selective deposition of the material on the functionalized mask surfaces.