Metal Nanowire Protective Layer for Low Connection Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for producing metal nanowires using porous alumina templates result in high connection resistance, limiting their conductivity and applications.
Innovation Solution
A method involving anodization of a valve metal substrate to form a porous anodized film, metal filling, removal of the anodized film and substrate to recover acicular metal, and forming a protective layer with a corrosion inhibitor to reduce surface oxide formation and lower connection resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal nanowire is produced using the conventional anodization method, then the nanowire structure can be formed, but the connection resistance becomes high
Solution Approach 1:
The patent applies preliminary action by performing a reduction treatment to remove surface oxide layers immediately after the mold removing step, before the protective layer forming step. This preliminary removal of oxide layers prevents high connection resistance from developing, ensuring low connection resistance in the final metal nanowire product.
Solution Approach 2:
The patent converts the harmful effect of surface oxide formation into a benefit by first allowing oxide layers to form naturally on the acicular metal, then systematically removing them through reduction treatment. This approach transforms the potential defect (oxide formation) into a controlled process step that ensures low connection resistance.
2Reliability
If the anodized film and substrate are removed to recover acicular metal, then the nanowire structure is obtained, but surface oxide layers form increasing connection resistance
Solution Approach 1:
The patent applies the extraction principle by specifically targeting and removing the harmful surface oxide layers from the acicular metal through a reduction treatment step. This extraction of the oxide layer (without removing the desired metal nanowire structure) directly addresses the harmful factor and reduces connection resistance.
Solution Approach 2:
The patent introduces a reduction treatment step as an intermediary process between the mold removing step and the protective layer forming step. This intermediary treatment effectively removes surface oxide layers that would otherwise increase connection resistance, serving as a mediating step to achieve the desired low resistance state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively produces metal nanowires with low connection resistance, enhancing their conductivity and suitability for conductive films and applications such as transparent conductive films.
Implementation Method 1
an anodization step of forming an anodized film having pores on a surface of a valve metal substrate
Implementation Method 2
the metal filling step includes a plating step
Data Source
AI summary
An object of the present invention is to provide a method for producing a metal nanowire, which makes it possible to obtain a metal nanowire with a low connection resistance; a metal nanowire; a dispersion liquid; and a conductive film. The method for producing a metal nanowire of an embodiment of the present invention includes an anodization step of forming an anodized film having pores on a surface of a valve metal substrate, a metal filling step of filling the pores with a metal, a mold removing step of removing the anodized film and the valve metal substrate to obtain an acicular metal, and a protective layer forming step of forming a protective layer containing a corrosion inhibitor on the acicular metal.