Metal-Nitrogen Contact Interlayer for Laser Semiconductor Reliability
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Solution Overview
Problem
The contact characteristics between metal and semiconductor in laser semiconductor devices are prone to failure due to high-temperature processes, affecting their optoelectronic properties and requiring an improvement to meet application requirements.
Innovation Solution
A semiconductor device structure that includes a substrate with an epitaxial stack and a first interlayer composed of metal and nitrogen (M1x1Ny1) on the substrate's bottom surface, where x1>y1, to enhance contact characteristics and prevent material diffusion, thereby improving the optoelectronic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal contact structures are used in laser semiconductor devices, then the device structure remains simple, but the contact characteristics deteriorate due to material diffusion during high-temperature processes
Solution Approach 1:
The patent introduces a nitrogen-containing metal compound interlayer (M1x1Ny1 where x1>y1) between the metal electrode and the semiconductor substrate. This intermediary layer acts as a diffusion barrier during high-temperature processes, preventing harmful material diffusion while maintaining good contact characteristics. The compound layer mediates the interaction between metal and semiconductor, solving the contact reliability problem without requiring complex multi-layer structures.
Solution Approach 2:
The patent uses a composite material approach by creating a metal-nitrogen compound layer with specific stoichiometry (M1x1Ny1 where x1>y1). This composite material combines the advantages of metal conductivity with nitrogen's ability to form stable, diffusion-resistant compounds at high temperatures, thereby improving contact characteristics while maintaining structural simplicity.
2Productivity
If high-temperature processes are applied to laser semiconductor devices, then the manufacturing process remains standard, but material diffusion occurs causing contact failure
Solution Approach 1:
The nitrogen-containing metal compound layer is formed in advance before the high-temperature manufacturing processes. This preliminary action creates a protective barrier that prevents material diffusion during subsequent high-temperature steps, allowing standard manufacturing processes to proceed without causing contact failure. The preventive layer is prepared beforehand to withstand the thermal processing conditions.
3Reliability
If the metal to nitrogen ratio is adjusted to improve contact characteristics, then the contact properties improve, but the material composition control becomes more difficult
Solution Approach 1:
The patent specifies a particular parameter range for the metal to nitrogen ratio (x1>y1 in M1x1Ny1) to optimize contact characteristics. By defining this specific compositional parameter range, the patent balances contact performance with manufacturability, ensuring that the compound layer has sufficient nitrogen content to prevent diffusion while maintaining metal-like conductivity properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enhances the contact characteristics between the substrate and electrodes, preventing material diffusion and improving the reliability and performance of the semiconductor device's optoelectronic properties.
Implementation Method 1
a first interlayer on the bottom surface and includes M1x1Ny1... preventing material diffusion
Data Source
AI summary
A semiconductor device includes a substrate, an epitaxial structure and a first interlayer. The substrate has an upper surface and a bottom surface. The epitaxial structure is on the upper surface and includes an active structure. The first interlayer is on the bottom surface and includes M1x1Ny1. M1 is metal and N is nitrogen, and x1>y1.