Metal Nitride Gate Electrode for Nitrogen Compensation in Semiconductor Devices
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Solution Overview
Problem
Existing semiconductor devices with nitride semiconductor layers face challenges in preventing nitrogen escape during manufacturing, particularly when etching or forming insulating films, and current solutions like silicon nitride deposition are inefficient and of poor quality.
Innovation Solution
A semiconductor device is designed with a nitride semiconductor layer, an oxide insulating film, and a gate electrode made of metal nitride in specific crystal orientations (200) and (220), which facilitates nitrogen compensation without using silicon nitride insulating films, achieved through reactive sputtering and heating processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film made of silicon nitride is deposited by atomic layer deposition process, then nitrogen escape from the nitride semiconductor layer is compensated, but the insulating film quality is poor and deposition time is extended
Solution Approach 1:
The patent changes the material composition parameters by forming a gate electrode with specific metal nitride crystal orientations ((200) and (220)) instead of using silicon nitride insulating film. This parameter change enables nitrogen compensation through the gate electrode structure itself, achieving the same nitrogen supply function while avoiding the time-consuming atomic layer deposition process and quality issues of silicon nitride films.
2Reliability
If an insulating film made of silicon nitride is deposited by atomic layer deposition process, then nitrogen escape from the nitride semiconductor layer is compensated, but the insulating film quality is poor
Solution Approach 1:
The patent changes the material composition parameters by forming a gate electrode with specific metal nitride crystal orientations ((200) and (220)) instead of using silicon nitride insulating film. This parameter change enables nitrogen compensation through the gate electrode structure itself, achieving the same nitrogen supply function while avoiding quality issues associated with silicon nitride film deposition.
Solution Approach 2:
The gate electrode is given multiple functions: it serves as both the electrical gate structure and as a nitrogen supply source to compensate for nitrogen escape from the nitride semiconductor layer. This multi-functionality eliminates the need for a separate silicon nitride insulating film, resolving the quality issues while maintaining nitrogen compensation capability.
3Loss of substance
If the gate electrode is made of metal nitride in specific crystal orientations, then nitrogen diffusion is increased to compensate for nitrogen loss, but the device structure becomes more complex
Solution Approach 1:
The gate electrode is given multiple functions: it serves as both the electrical gate structure and as a nitrogen supply source to compensate for nitrogen escape from the nitride semiconductor layer. This multi-functionality eliminates the need for a separate silicon nitride insulating film, resolving the quality issues while maintaining nitrogen compensation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively compensates for nitrogen loss from the nitride semiconductor layer, improving the semiconductor device's performance by increasing nitrogen diffusion and reducing gate leakage current and threshold voltage.
Implementation Method 1
improving the semiconductor device's performance by increasing nitrogen diffusion
Implementation Method 2
achieved through reactive sputtering and heating processes
Implementation Method 3
achieved through reactive sputtering and heating processes
Data Source
AI summary
A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.