Metal Nitride Film Deposition With Intermittent Plasma Purification
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Solution Overview
Problem
Existing substrate processing methods fail to effectively form low-resistance metal-containing nitride films, as they often result in high resistivity due to residual impurities like chlorine and carbon, and require frequent plasma processing, which can damage the films.
Innovation Solution
A substrate processing method involving alternating cycles of supplying organic metal-containing and nitrogen-containing gases, followed by plasma modification to remove impurities, reducing the frequency of plasma processing and minimizing film damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed frequently to remove residual impurities, then the resistivity of the metal-containing nitride film is reduced, but the film is damaged due to excessive plasma exposure
Solution Approach 1:
The patent applies preliminary action by performing plasma processing intermittently during the film formation process rather than after complete deposition. Specifically, plasma processing is performed at predetermined intervals during the alternating supply cycles of organic metal-containing gas and nitrogen-containing gas, allowing impurity removal to occur progressively as the film forms, rather than requiring frequent post-deposition plasma treatment that would damage the completed film.
2Device complexity
If conventional substrate processing methods are used to form metal-containing nitride films, then the formation process is simplified, but residual impurities like chlorine and carbon remain causing high resistivity
Solution Approach 1:
The patent applies periodic action through alternating cycles of supplying organic metal-containing gas and nitrogen-containing gas, with plasma processing performed at predetermined intervals during these cycles. This periodic combination of chemical deposition and plasma treatment continues for multiple cycles, systematically removing impurities like chlorine and carbon while maintaining process simplicity through automated cycle control.
3Manufacturing precision
If plasma processing frequency is increased to improve film quality, then residual impurities are reduced, but processing throughput decreases
Solution Approach 1:
The patent applies continuity of useful action by integrating plasma processing into the continuous alternating supply cycles of organic metal-containing gas and nitrogen-containing gas. Rather than stopping deposition to perform plasma treatment, the plasma processing occurs at predetermined intervals within the continuous cyclical process, maintaining uninterrupted film formation while periodically removing impurities, thus preserving throughput while improving film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of low-resistance metal-containing nitride films by reducing residual impurities and optimizing plasma processing frequency, improving film density and adhesion while enhancing processing throughput.
Implementation Method 1
a step of modifying the metal-containing nitride film by generating plasma in the processing container
Implementation Method 2
forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately
Data Source
AI summary
Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.