Metal Nitride Underlayer Coating for Semiconductor Hard Mask
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Solution Overview
Problem
In semiconductor device manufacturing, the use of organic underlayer coatings leads to a reduction in photoresist film thickness during dry etching, making it difficult to maintain sufficient film thickness for protective coating, especially when using thin film photoresists, and there is a need for an alternative that can be formed by a spin-coating method rather than vapor deposition.
Innovation Solution
A spin-coating method using an underlayer coating forming composition comprising metal nitride particles with an average diameter of 1 to 1000 nm, combined with an organic solvent and organic materials like polymers and crosslinking compounds, which forms a hard mask that prevents intermixing with photoresists and reduces dry etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If an organic underlayer coating is used, then the underlayer can be formed by spin-coating method, but the photoresist film thickness is reduced during dry etching
Solution Approach 1:
The patent uses a composite material consisting of inorganic metal nitride particles dispersed in an organic binder resin. This composite structure combines the spin-coating processability of organic materials with the dry etching resistance of inorganic materials, resolving the contradiction between ease of manufacture and manufacturing precision.
2Measurement precision
If photoresist in thin film form is used, then the resolution is improved, but the film thickness is insufficient as protective coating
Solution Approach 1:
The composite underlayer coating provides sufficient thickness to serve as a protective coating during dry etching, enabling the use of thinner photoresist films for improved resolution while maintaining the necessary protective function.
Solution Approach 2:
The inorganic metal nitride particles act as an intermediary that enhances the dry etching resistance of the organic binder resin, creating a barrier that protects the thin photoresist film from being etched away.
3Manufacturing precision
If hard mask is formed by vapor deposition method, then the dry etching rate is reduced, but the device complexity increases
Solution Approach 1:
The patent replaces the vapor deposition mechanical system with a spin-coating process using a composite material formulation. This substitution maintains the low dry etching rate benefit while eliminating the need for complex vacuum deposition equipment.
Solution Approach 2:
The invention changes the physical state and formation method of the hard mask from a vapor-deposited solid layer to a spin-coated composite material layer, fundamentally altering the manufacturing process parameters while achieving the same functional outcome.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides an underlayer coating that maintains photoresist film thickness during dry etching, allows for the use of thin film photoresists, and can be formed using a spin-coating method, ensuring a sufficient protective coating for semiconductor substrates while preventing intermixing with photoresists.
Implementation Method 1
comprising metal nitride particles having an average particle diameter of 1 to 1000 nm, and an organic solvent
Data Source
AI summary
There is provided an underlayer coating that causes no intermixing with photoresist layer, can be formed by a spin-coating method, and can be used as a hard mask in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition used in manufacture of semiconductor device including metal nitride particles having an average particle diameter of 1 to 1000 nm, and an organic solvent. The metal nitride particles contain at least one element selected from the group consisting of titanium, silicon, tantalum, tungsten, cerium, germanium, hafnium, and gallium.