Metal Oxide Deposition Sequence for CAAC Semiconductor Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, high reliability, miniaturization, high on-state current, excellent frequency characteristics, and reduced power consumption while maintaining data retention and high-speed data writing capabilities.
Innovation Solution
A method for manufacturing semiconductor devices involves forming a metal oxide over a substrate by alternately introducing precursors and oxidizers in a chamber, with specific precursors containing indium, zinc, and other elements, and oxidizers like ozone or oxygen, using atomic layer deposition to control the atomic ratio and crystallinity, resulting in a CAAC structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductors with CAAC structure are used to improve electrical characteristics and reduce off-state current, then device reliability and power consumption are improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent applies parameter changes by precisely controlling the atomic ratio of metal elements (In:Ga:Zn = 1:(1-α):2) and deposition conditions to form CAAC-IGZO films. By adjusting composition parameters and deposition temperature, the patent achieves high crystallinity and c-axis alignment without requiring excessively complex manufacturing processes, thus improving reliability while managing manufacturing complexity
Solution Approach 2:
The patent uses composite materials by forming multi-element metal oxides (In-Ga-Zn oxide) with specific compositional ratios. This composite approach enables the material to exhibit both high crystallinity for reliability and compatibility with existing semiconductor manufacturing processes, resolving the contradiction between device reliability and manufacturing complexity
2Manufacturing precision
If multiple precursors and oxidizers are introduced alternately to control atomic ratio and crystallinity, then metal oxide quality and electrical characteristics improve, but manufacturing time and process steps increase
Solution Approach 1:
The patent applies periodic action through alternating introduction of precursors and oxidizers in a cyclic deposition process. This periodic introduction pattern enables precise control of atomic ratios and film composition while maintaining a systematic and repeatable manufacturing process, balancing manufacturing precision with productivity through rhythmical process control
Solution Approach 2:
The patent uses preliminary action by pre-determining the optimal atomic ratio (In:Ga:Zn = 1:(1-α):2) and composition parameters before deposition. This preliminary design of material composition allows the manufacturing process to proceed efficiently with standardized steps, reducing actual process time while ensuring high precision in atomic ratio control
3Reliability
If indium-containing precursors are used to form metal oxide films, then electrical characteristics and on-state current improve, but manufacturing cost and material complexity increase
Solution Approach 1:
The patent applies local quality by positioning indium specifically in the metal oxide film where it is needed for optimal electrical characteristics. By concentrating indium in the active channel region with controlled atomic ratio, the patent achieves high on-state current and electrical performance while limiting indium usage to essential areas, thereby reducing overall material cost and manufacturing complexity
Solution Approach 2:
The patent uses parameter changes by optimizing the indium concentration parameter within specific atomic ratio ranges (In:Ga:Zn = 1:(1-α):2). This parameter optimization enables the material to achieve excellent electrical characteristics at moderate indium concentrations, avoiding excessive material costs while maintaining high performance and ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the production of semiconductor devices with improved electrical characteristics, high reliability, and reduced power consumption, while allowing for miniaturization and high-speed data processing with enhanced frequency performance.
Implementation Method 1
a metal organic precursor is introduced into a chamber, decomposed, and a metal oxide is formed
Implementation Method 2
a metal organic precursor is introduced into a chamber, decomposed, and a metal oxide is formed
Implementation Method 3
introducing a first oxidizer after the introduction of the first precursor; introducing a second oxidizer after the introduction of the second precursor
Data Source
AI summary
A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.