Metal Oxide Coating Film Bubble Suppression via Segmented Heating
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Solution Overview
Problem
In semiconductor manufacturing, the baking process for forming a metal oxide coating film often generates bubbles due to the crosslinking reaction, which can lead to defects and inefficiencies.
Innovation Solution
A substrate processing method involving the application of a metal oxide solution to a wafer, heating it at a temperature lower than the crosslinking temperature, and irradiating it with energy rays to form a coating film, thereby suppressing bubble generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a baking process is performed at crosslinking temperature to form a coating film containing metal oxide, then the crosslinking reaction is promoted and coating film formation is achieved, but bubbles are generated during the process
Solution Approach 1:
The patent divides the coating formation process into three distinct stages: (1) applying the solution to form a liquid film, (2) heating at a first temperature lower than crosslinking temperature to evaporate solvent, and (3) heating at a second temperature equal to or higher than crosslinking temperature to promote crosslinking. This segmentation prevents bubble generation by separating solvent evaporation from the crosslinking reaction, avoiding the harmful effect of simultaneous heating that causes bubbling.
Solution Approach 2:
The patent performs preliminary solvent evaporation by heating the liquid film at a first temperature before performing the crosslinking reaction. This preliminary action removes the solvent that would otherwise cause bubbling during crosslinking, allowing the subsequent crosslinking process to proceed without harmful bubble generation while still achieving proper coating film formation.
2Reliability
If heating is performed to promote crosslinking reaction, then coating film formation is achieved, but the process time is extended due to multiple heating stages
Solution Approach 1:
The patent maintains continuous heating throughout the process, transitioning from heating at a first temperature for solvent evaporation to heating at a second temperature for crosslinking without interrupting the thermal action. This continuous heating approach eliminates the need to cool down between stages, reducing overall process time while still achieving the benefits of separated heating stages for preventing bubble formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces bubble formation during the coating process, maintaining fluidity and facilitating crosslinking reactions without excessive contraction, resulting in a more reliable and efficient coating film formation.
Implementation Method 1
heating the liquid film at a first temperature lower than a crosslinking temperature of the compound
Implementation Method 2
irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface
Data Source
AI summary
A substrate processing method includes applying a solution of a compound containing a metal oxide to a surface of a wafer to form a liquid film of the solution on the surface of the wafer, heating the liquid film at a first temperature lower than a crosslinking temperature of the compound, and irradiating the liquid film with energy rays to form a coating film containing the metal oxide on the surface, after heating the liquid film at the first temperature.