Metal Oxide Etch Mask Formation for Easier Substrate Pattern Transfer
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Solution Overview
Problem
Existing etching methods for semiconductor devices require high-cost, low-throughput masks like nanocrystalline diamond layers, which are difficult to remove after etching, and there is a need for a cost-effective, high-etching resistance mask that can be easily removed.
Innovation Solution
A substrate treatment method involving the application of a coating solution containing an organometallic complex, solvent, and additive to form an organic constituent-containing metal oxide film, followed by dry etching using this film as a mask and subsequent removal of the organic constituent through wet etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nanocrystalline diamond layer is used as etch mask, then etching resistance is improved, but manufacturing cost increases and mask removal becomes difficult
Solution Approach 1:
The patent changes the material parameters from nanocrystalline diamond to metal oxide (such as aluminum oxide or titanium oxide) deposited by ALD or atomic layer deposition. This parameter change maintains high etching resistance while reducing manufacturing cost and improving mask removal ease, as metal oxide masks can be selectively removed without damaging underlying structures
Solution Approach 2:
The patent employs a disposable metal oxide mask layer that is intentionally designed to be removed after serving its etching protection function. This mask layer is deposited at controlled thickness (e.g., 5-50 nm) to provide sufficient etching resistance during the etching process, then selectively removed using chemical etchants or plasma treatment, eliminating the need for expensive and difficult-to-remove diamond masks
2Reliability
If nanocrystalline diamond layer is used as etch mask, then etching resistance is improved, but mask removal ease deteriorates
Solution Approach 1:
The patent introduces an intermediary metal oxide layer between the etch mask and the underlying device layer. This intermediary layer provides the necessary etching resistance during the etching process, then serves as a sacrificial layer that can be selectively removed using chemical etchants or plasma treatment, facilitating easy mask removal without damaging the underlying structures
Solution Approach 2:
The patent uses composite material structures where a metal oxide mask layer (such as aluminum oxide or titanium oxide) is deposited over the device layer. This composite structure combines the high etching resistance of metal oxides with the ability to be selectively removed through chemical or plasma treatment, resolving the contradiction between etching resistance and mask removal ease
3Reliability
If CVD process is used to deposit nanocrystalline diamond mask, then etching resistance is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent replaces the mechanical/thermal CVD process with a chemical deposition process (ALD or atomic layer deposition). This substitution uses vapor-phase chemical reactions to deposit metal oxide masks, eliminating the need for complex CVD equipment and processes while achieving controlled, uniform mask layers with precise thickness control and good step coverage
Solution Approach 2:
The patent changes the deposition method from CVD to ALD, altering the process parameters from high-temperature chemical vapor deposition to low-temperature atomic layer deposition. This parameter change simplifies the manufacturing process, reduces equipment complexity, enables better thickness control, and allows deposition on temperature-sensitive substrates while maintaining high etching resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables etching with a high-etching resistance mask that is cost-effective and easily removable, allowing for efficient pattern transfer and reduced damage to underlying structures.
Implementation Method 1
applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution
Implementation Method 2
heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film
Implementation Method 3
performing dry etching using the organic constituent-containing metal oxide film as a mask
Implementation Method 4
removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film
Data Source
AI summary
A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.