Metal Oxide Semiconductor Structure for High-Voltage Current Flow
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Solution Overview
Problem
Current semiconductor devices using metal oxide layers in transistors face challenges in achieving high-voltage driving capabilities and reliable electrical characteristics, particularly in terms of carrier concentration and hydrogen diffusion, which affect the device's performance and reliability.
Innovation Solution
A semiconductor device structure is proposed, featuring a metal oxide layer positioned between insulating and conductive layers, with specific regions having varying carrier concentrations and hydrogen levels, and an insulating region with different permittivity, to enhance electrical characteristics and reliability under high-voltage conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal oxide layer is used in a transistor to achieve high field-effect mobility, then the device can enable high-performance display devices with driver circuits, but the device faces challenges in achieving high-voltage driving capabilities and reliable electrical characteristics
Solution Approach 1:
The patent applies local quality by creating distinct regions within the semiconductor layer with different carrier concentrations. The first region has a first carrier concentration while the second region has a second carrier concentration that is higher than the first, allowing different areas to serve different functional requirements for voltage handling and current conduction
Solution Approach 2:
The patent utilizes parameter changes by varying the carrier concentration across different regions of the semiconductor layer. This gradient in carrier concentration enables the device to achieve both reliable electrical characteristics in the low-carrier region and high-voltage driving capability in the high-carrier region
2Adaptability or versatility
If the carrier concentration is increased to enable high-voltage driving, then the device can achieve high-voltage driving capabilities, but the electrical characteristics and reliability may deteriorate
Solution Approach 1:
The patent segments the semiconductor layer into multiple regions with different carrier concentrations. The first region maintains lower carrier concentration for stable electrical characteristics, while the second region has higher carrier concentration for high-voltage driving, thus resolving the contradiction through spatial segmentation
Solution Approach 2:
Different regions are assigned different local qualities in terms of carrier concentration. The first region has low carrier concentration for reliability, while the second region has high carrier concentration for voltage handling, allowing the device to achieve both requirements simultaneously in different locations
3Ease of manufacture
If hydrogen diffusion is not controlled, then the manufacturing process is simpler, but the electrical characteristics and device performance deteriorate
Solution Approach 1:
The patent introduces an intermediary layer between the metal oxide layer and the semiconductor layer. This intermediary layer acts as a barrier to hydrogen diffusion, preventing hydrogen from reaching the semiconductor layer and degrading electrical characteristics, while still allowing the manufacturing process to remain relatively simple
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves favorable electrical characteristics, enabling high-voltage driving and reliable current flow while maintaining high reliability by optimizing carrier concentration and hydrogen management within the semiconductor layer.
Implementation Method 1
The insulating region shows a different permittivity from the first insulating layer
Implementation Method 2
The first region has the lowest carrier concentration and the fourth region has the highest carrier concentration among the first region, the second region, the third region and the fourth region
Implementation Method 3
The first region has the lowest hydrogen concentration and the fourth region has the highest hydrogen concentration among the first region, the second region, the third region and the fourth region
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device capable of high-voltage driving is provided. A semiconductor device in which a large amount of current can flow is provided. The semiconductor device has a structure including a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The metal oxide layer is positioned between the first insulating layer and the conductive layer. The insulating region is adjacent to the metal oxide layer and is positioned between the first insulating layer and the conductive layer. The semiconductor layer includes a first region in contact with the first insulating layer and overlapping with the metal oxide layer and the conductive layer with the first insulating layer therebetween, a second region in contact with the first insulating layer and overlapping with the insulating region and the conductive layer with the first insulating layer therebetween, a third region in contact with the first insulating layer, and a fourth region in contact with the second insulating layer. The insulating region shows a different permittivity from the first insulating layer.