Metal Oxide Semiconductor Channel Hydrogen Diffusion Control
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Solution Overview
Problem
Current semiconductor technologies face challenges in producing reliable semiconductor devices with stable electrical characteristics, low power consumption, and high integration capabilities due to issues with hydrogen diffusion and oxygen vacancies in oxide semiconductor channels.
Innovation Solution
A metal oxide with a c-axis aligned crystal structure, containing indium and elements like gallium, aluminum, or tin, is used in the channel formation region, with a hydrogen diffusion length of 200 nm or less and low absorption due to localized states, formed through a deposition and heat treatment process that inhibits hydrogen diffusion and reduces oxygen vacancies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If oxide semiconductor is used in transistor channel, then low power consumption is achieved, but hydrogen diffusion causes instability in electrical characteristics
Solution Approach 1:
The patent changes the physical and chemical parameters of the oxide semiconductor by controlling oxygen vacancy concentration and hydrogen content through specific deposition conditions (oxygen partial pressure, substrate temperature) and post-deposition heat treatment, thereby reducing hydrogen diffusion and stabilizing electrical characteristics while maintaining low power consumption
Solution Approach 2:
The patent employs inert or oxidizing atmosphere during deposition and heat treatment processes to prevent hydrogen incorporation and reduce oxygen vacancies, creating a stable oxide semiconductor channel that resists hydrogen diffusion and maintains reliable electrical characteristics
2Use of energy by moving object
If oxide semiconductor channel is used, then low power consumption is achieved, but variations in transistor characteristics increase
Solution Approach 1:
The patent optimizes deposition parameters (oxygen partial pressure ratio, substrate temperature) and heat treatment conditions to control oxygen vacancy concentration and hydrogen content, reducing variations in transistor characteristics such as threshold voltage and on-state current while preserving low power consumption properties
Solution Approach 2:
The patent performs preliminary heat treatment immediately after deposition to stabilize the oxide semiconductor structure before subsequent processing steps, preventing variations in transistor characteristics by establishing a consistent baseline state early in the manufacturing process
3Ease of manufacture
If conventional oxide semiconductor is used, then device fabrication is simplified, but on-state current is insufficient
Solution Approach 1:
The patent adjusts oxygen partial pressure and substrate temperature during deposition, and controls heat treatment temperature and atmosphere, to optimize carrier concentration and mobility in the oxide semiconductor channel, achieving high on-state current while maintaining fabrication simplicity through a single deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor devices with improved reliability, reduced variations in transistor characteristics, high on-state current, and low power consumption, enabling miniaturization and high integration while maintaining stable electrical performance.
Implementation Method 1
The diffusion length of hydrogen in the metal oxide is 200 nm or less
Implementation Method 2
performing heat treatment at a temperature higher than or equal to 500° C. and lower than or equal to 600° C. after the metal oxide film is deposited
Implementation Method 3
The metal oxide film is deposited by a sputtering method using an In-M-Zn oxide target
Data Source
AI summary
A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.