Metal-Oxide Inner Spacer for Nanosheet Source/Drain Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in enhancing the reliability of source/drain regions and inner spacers, particularly in multi-gate transistors, where the short channel effect and current control capabilities are not adequately addressed.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns, nanosheets, and a gate electrode, featuring a source/drain region with a metal-doped first layer and a second layer, along with an inner spacer made of metal oxide, which is formed by oxidizing the same material as the metal doped in the first layer, to improve reliability and current control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional source/drain regions and inner spacers are used in multi-gate transistors, then manufacturing is simpler, but reliability is insufficient and short channel effect is not effectively suppressed
Solution Approach 1:
The source/drain region is constructed as a composite structure with a first layer containing metal atoms (Al or Ni) and a second layer formed by oxidizing the metal, creating a metal-oxide composite structure that provides both electrical conductivity and reliability enhancement. The inner spacer is formed as a metal oxide layer that provides mechanical stability and electrical isolation, contributing to overall device reliability while maintaining a manageable structural complexity through the systematic use of metal-oxide combinations throughout the device architecture.
2Ease of operation
If conventional structures are used, then device structure is simpler, but current control capability is inadequate
Solution Approach 1:
The invention applies local quality by creating a metal-doped first layer in the source/drain region that provides enhanced electrical conductivity and carrier control in critical areas. The metal atoms (Al or Ni) are strategically positioned to improve current control capability where needed, while the oxidation process creates a graded structure that transitions from metallic to insulating properties, enabling precise local control of electrical characteristics without requiring complex global structural changes.
3Object-affected harmful factors
If conventional structures are used, then manufacturing process is simpler, but short channel effect is not suppressed
Solution Approach 1:
The invention employs parameter changes by introducing metal atoms (Al or Ni) into the source/drain region structure, fundamentally altering the electrical and physical parameters of the material. The subsequent oxidation process further transforms these parameters, creating a metal-oxide composite with tailored properties that suppress short channel effect. This approach achieves effective SCE suppression through material parameter modification rather than requiring complex geometric or structural changes, maintaining relative manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of the source/drain regions and inner spacers, effectively suppressing the short channel effect and improving current control capabilities in multi-gate transistors.
Implementation Method 1
the inner spacer including a metal oxide formed by oxidizing the same material as the metal
Data Source
AI summary
A semiconductor device includes: a substrate, an active pattern extending in a first horizontal direction on the substrate, a plurality of nanosheets spaced apart from each other and stacked in a vertical direction on the active pattern, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region disposed on at least one side of the gate electrode on the active pattern, the source/drain region including a first layer doped with a metal, and a second layer disposed on the first layer, and an inner spacer disposed between the gate electrode and the first layer, between each of the plurality of nanosheets, the inner spacer in contact with the first layer, the inner spacer including a metal oxide formed by oxidizing the same material as the metal.