Metal Oxide Layer Composition Control by Atomic Layer Deposition
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Solution Overview
Problem
The fabrication of metal oxide semiconductor layers for thin film transistor devices faces challenges such as substantial waste of precious materials due to blanket deposition and lack of precise control over the constituency and stoichiometry of multi-component oxides, affecting the electrical properties and stability of transistors.
Innovation Solution
A method involving atomic layer deposition (ALD) is used to form a multi-component metal oxide semiconductor thin film with varying concentrations of metal oxides, where a hydrophobic resist is pre-patterned on a substrate to enable self-aligned deposition, reducing material waste and allowing precise control over the composition and stoichiometry, resulting in improved electrical properties and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If blanket deposition is used to form metal oxide semiconductor layers, then complete coverage is achieved, but substantial waste of precious materials occurs
Solution Approach 1:
The patent applies local quality by creating a hydrophobic pattern on the substrate that directs metal oxide deposition to specific regions. The hydrophobic resist is patterned to define where deposition should occur, allowing precise spatial control of material placement and preventing waste on areas where the semiconductor layer is not needed.
Solution Approach 2:
The patent uses preliminary action by pre-patterning the substrate with hydrophobic resist before deposition. This pre-patterned surface guides the subsequent metal oxide deposition process, ensuring materials are deposited only in desired locations and compositions are controlled before the actual semiconductor layer formation begins.
2Reliability
If multi-component oxides are used to improve electrical properties, then stoichiometry control becomes more difficult
Solution Approach 1:
The patent applies parameter changes by systematically varying the composition ratios of multiple metal oxides in the multi-component system. By controlling the relative amounts of different metal oxides and their deposition parameters, the invention achieves precise stoichiometry control while maintaining improved electrical properties through the multi-component composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material waste, enhances the electrical properties of the semiconductor layer near the gate insulator interface, and provides a stable insulating barrier at the back channel surface, improving the overall performance and stability of the thin film transistor devices.
Implementation Method 1
a hydrophobic resist is pre-patterned on a substrate to enable self-aligned deposition
Implementation Method 2
A method involving atomic layer deposition (ALD) is used to form a multi-component metal oxide semiconductor thin film
Data Source
AI summary
This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).