Metal Oxide Interface Layer for RDL Adhesion in IC Packaging
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving strong adhesion between metallization and dielectric layers in semiconductor devices, which can lead to delamination issues, especially as feature sizes decrease and integration density increases.
Innovation Solution
A metal oxide layered structure with a 1:1 metal to oxygen atom ratio is formed on the metallization pattern, either directly or after native oxide formation, to enhance adhesion between the metallization and dielectric layers, using processes like oxygen-containing plasma treatment, and is integrated into chip-on-package and package-on-package structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metallization and dielectric layers are deposited sequentially in conventional semiconductor fabrication, then manufacturing process simplicity is maintained, but adhesion between layers deteriorates leading to delamination
Solution Approach 1:
A metal oxide intermediate layer is introduced between the metallization layer and the dielectric layer to serve as an adhesion promoter. This intermediate layer chemically bonds to both the underlying metallization and the overlying dielectric material, preventing delamination while maintaining process compatibility with existing semiconductor fabrication techniques.
Solution Approach 2:
The structure employs a composite material system consisting of metallization layer, metal oxide intermediate layer, and dielectric layer. Each layer contributes different properties: the metallization provides electrical conductivity, the metal oxide provides adhesion and chemical stability, and the dielectric provides insulation. This composite approach solves the adhesion problem while enabling continued scaling.
2Productivity
If feature sizes are reduced to increase integration density, then productivity and integration density improve, but adhesion strength deteriorates due to smaller bonding areas
Solution Approach 1:
The invention changes the chemical and physical parameters of the interface between metallization and dielectric by introducing a metal oxide layer with specific stoichiometry and crystalline structure. This layer has enhanced surface energy and chemical reactivity that promotes strong bonding even at reduced feature sizes, allowing integration density to increase without sacrificing adhesion strength.
3Manufacturing precision
If native oxide is removed before dielectric deposition to improve interface quality, then interface purity improves, but adhesion deteriorates due to lack of oxide bonding
Solution Approach 1:
The invention applies local quality control by creating a metal oxide intermediate layer with specific properties at the metallization-dielectric interface. This layer is engineered to have optimal thickness and composition to provide both chemical bonding capability and interface quality, resolving the contradiction between interface purity and adhesion strength through localized material engineering.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal oxide layered structure improves adhesion, reducing the risk of delamination and allowing for more compact and reliable electronic packaging by ensuring strong bonding between layers, even at smaller scales.
Implementation Method 1
using processes like oxygen-containing plasma treatment
Implementation Method 2
treating the metallization pattern with an oxygen-containing plasma, the treating forming a metal oxide layer
Data Source
AI summary
Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.