Metal Oxide Resist Processing for Lower Line Edge Roughness
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Solution Overview
Problem
The formation of irregularities and high roughness in resist patterns due to non-uniform exposure and development processes in photolithography, leading to difficulties in transferring precise patterns to underlying films.
Innovation Solution
A method involving reduction processing of hydrocarbons in a metal oxide resist film, followed by plasma exposure to helium gas to reduce roughness and enhance pattern uniformity, combined with re-formation of resist patterns until satisfactory quality is achieved.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography exposure and development processes are performed, then resist patterns are formed, but line edge roughness and line width roughness increase due to non-uniform processing
Solution Approach 1:
The patent applies preliminary action by performing reduction processing on the resist film before the main photolithography exposure and development processes. This pre-treatment reduces hydrocarbons in the resist film, creating a more uniform base structure that prevents roughness formation during subsequent processing, thereby improving line edge roughness and pattern uniformity
Solution Approach 2:
The patent utilizes parameter changes by exposing the resist film to plasma treatment that alters the chemical composition and physical properties of the resist material. This plasma exposure changes the resist film's characteristics, reducing hydrocarbon content and improving uniformity, which directly addresses the roughness issue while maintaining pattern formation capability
2Manufacturing precision
If reduction processing is performed to reduce hydrocarbons in the resist film, then pattern uniformity improves, but additional processing steps are required
Solution Approach 1:
The patent merges the reduction processing step with the existing photolithography workflow by integrating plasma treatment into the standard process sequence. The reduction processing is combined with exposure and development steps in a coordinated manner, allowing multiple functions to be achieved through an integrated process rather than separate standalone operations
Solution Approach 2:
The patent employs phase transitions by utilizing plasma state changes to achieve reduction processing. The plasma treatment transitions the resist film from one physical-chemical state to another, where hydrocarbons are removed or modified through plasma-phase interactions, achieving pattern uniformity improvement through a controlled phase transition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces line edge roughness and line width roughness, enhances pattern strength, and ensures accurate transfer of patterns to underlying films by repeated re-formation and inspection.
Implementation Method 1
performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film
Implementation Method 2
performing a processing of reducing roughness of the resist film after being subjected to the reduction processing
Data Source
AI summary
A substrate processing method includes performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film. The resist film includes a metal oxide resist, exposed to light, and developed to have a pattern. The method further includes performing a processing of reducing roughness of the resist film after being subjected to the reduction processing.