Metal Oxalate Composition for Low-Temperature Oxide Semiconductor Fabrication
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Solution Overview
Problem
The existing solution processes for manufacturing oxide semiconductors require high-temperature annealing to remove impurities, making it difficult to apply these processes to flexible substrates like plastic, which can be damaged by heat and result in environmental by-products.
Innovation Solution
A composition comprising a metal oxalate and a solvent, including zinc, tin, or gallium combined with oxalate ions, is used to form a complex compound that allows for low-temperature annealing of thin films, preventing damage to flexible substrates and reducing environmental impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature annealing is performed to remove impurities from oxide semiconductor thin films, then the purity and quality of the oxide semiconductor is improved, but the substrate may be damaged and environmental by-products are generated
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor material from conventional metal organic compounds to metal oxalate complexes. This parameter change enables the decomposition and impurity removal process to occur at significantly lower temperatures (below 400°C instead of typical high-temperature annealing), thereby maintaining oxide semiconductor purity while preventing substrate damage and reducing environmental by-products.
Solution Approach 2:
The patent employs composite precursor materials consisting of metal oxalate complexes formed by coordinating metal ions with oxalate ligands. These composite materials decompose at lower temperatures compared to conventional metal organic compounds, enabling effective impurity removal without requiring high-temperature annealing that would damage flexible substrates or generate harmful environmental by-products.
2Ease of manufacture
If solution process is used to manufacture oxide semiconductors, then the manufacturing complexity is reduced and large-scale production is facilitated, but impurities remain in the thin film requiring additional high-temperature annealing
Solution Approach 1:
The patent uses metal oxalate complex compounds as precursor materials in the solution process. These composite materials are designed to decompose completely at low temperatures, ensuring that no organic impurities remain in the final oxide semiconductor thin film. This eliminates the need for additional high-temperature annealing steps while maintaining the manufacturing simplicity and scalability advantages of the solution process.
Solution Approach 2:
By changing the chemical parameters of the precursor from conventional metal organic compounds to metal oxalate complexes, the patent achieves complete decomposition at low temperatures during the solution process. This parameter change ensures high purity oxide semiconductor formation without requiring subsequent high-temperature annealing, thus maintaining both ease of manufacture and manufacturing precision.
3Ease of manufacture
If conventional metal organic compounds are used as precursors, then the oxide semiconductor can be formed, but high-temperature annealing is required to remove organic impurities
Solution Approach 1:
The patent fundamentally changes the chemical composition parameter of the precursor material from conventional metal organic compounds to metal oxalate complexes. This parameter change results in a material that decomposes at much lower temperatures, eliminating the requirement for high-temperature annealing while still enabling successful oxide semiconductor formation through the solution process.
Solution Approach 2:
The patent employs metal oxalate complex compounds as alternative precursor materials. These composite materials are specifically chosen because their molecular structure allows for low-temperature decomposition, thereby forming oxide semiconductors without requiring high-temperature annealing processes that would damage flexible substrates or generate environmental by-products.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of oxide semiconductors at relatively low temperatures, facilitating their application to plastic substrates while minimizing by-products and improving processing efficiency.
Implementation Method 1
The metal oxalate may form a complex compound with at least one of halogen acid, water, nitric acid, acetic acid, sulfuric acid, phosphoric acid, oxalic acid, perchloric acid and fluoboric acid
Implementation Method 2
an annealing process at high temperature needs to be further performed. Therefore, a high temperature annealing process must be used
Data Source
AI summary
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.