Metal Oxide Semiconductor Crystallization for Etch Resistance
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Solution Overview
Problem
The existing methods for fabricating thin-film transistors (TFTs) are susceptible to etchant corrosion, leading to a decrease in yield due to the susceptibility of active layers during the etching process.
Innovation Solution
A method for crystallizing a metal oxide semiconductor layer by treating an amorphous metal oxide semiconductor layer with oxygen or an inert gas to form indium oxide crystallization layers, which are acid-resistant and have improved stability and conductivity, thereby protecting the active layer from etchant corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet etching or dry etching is used to pattern the metal layer, then the source and drain can be formed, but the active layer is damaged by etchant exposure resulting in decreased TFT yield
Solution Approach 1:
An amorphous metal oxide semiconductor layer is formed on the active layer before the etching process. This preliminary layer serves as a protective barrier that prevents etchant damage to the active layer during subsequent wet or dry etching steps, thereby maintaining high TFT yield while enabling standard fabrication processes
Solution Approach 2:
The amorphous metal oxide semiconductor layer acts as an intermediary protective layer between the active layer and the etchant. This intermediate layer absorbs the harmful effect of the etchant, allowing the etching process to proceed without damaging the underlying active layer, thus resolving the contradiction between ease of manufacture and reliability
2Reliability
If the amorphous metal oxide semiconductor layer is treated with oxygen at high pressure and temperature, then indium oxide crystallization layer is formed with improved acid-resistance and conductivity, but the processing complexity increases
Solution Approach 1:
The amorphous metal oxide semiconductor layer is subjected to oxygen plasma treatment at controlled pressure (550-5000 mtorr) and temperature (200-750°C) parameters. These parameter changes induce crystallization of indium oxide, transforming the layer from amorphous to crystalline state, which significantly improves acid-resistance and conductivity without requiring overly complex equipment
Solution Approach 2:
The treatment process induces a phase transition from amorphous to crystalline state in the metal oxide semiconductor layer. This phase transition, driven by oxygen plasma exposure at specific pressure and temperature conditions, creates an indium oxide crystallization layer with enhanced properties including improved acid-resistance and electrical conductivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The crystallization method enhances the acid-resistance and conductivity of the semiconductor structure, improving the yield and performance of TFTs by preventing corrosion during the etching process.
Implementation Method 1
treating the amorphous metal oxide semiconductor layer with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C., and changing a part of the amorphous metal oxide semiconductor layer into an indium oxide crystallization layer
Implementation Method 2
treating the amorphous metal oxide semiconductor layer with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C.
Data Source
AI summary
The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.