Metal Oxide TFT Contact Structure With Intermediate Conductive Layers
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Solution Overview
Problem
The direct contact between source/drain metal contacts and a metal oxide channel in thin film transistors leads to diffusion of metal atoms into the channel, forming interfacial metal oxides with high electrical resistance, increasing contact resistance.
Innovation Solution
Incorporating two intermediate conductive layers, formed through an oxygen-rich process, between the metal oxide channel and the source/drain metal contacts, which are configured as multi-layered structures with predetermined symmetry to reduce oxygen vacancies and minimize metal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct contact between source/drain metal contacts and metal oxide channel is used, then device structure is simple, but interfacial metal oxides form with high electrical resistance
Solution Approach 1:
The patent introduces intermediate conductive layers between the metal contacts and metal oxide channel. These intermediate layers act as mediators that prevent direct contact between metal atoms and the channel, thereby preventing formation of high-resistance interfacial metal oxides while maintaining structural feasibility
Solution Approach 2:
The patent employs composite material structures consisting of multiple layers with different compositions (metal contacts, intermediate conductive layers, and metal oxide channel). This composite approach combines the advantages of each material to achieve both structural integrity and low electrical resistance
2Reliability
If intermediate conductive layers are added to prevent metal diffusion, then contact resistance is reduced, but device structure becomes more complex
Solution Approach 1:
The patent segments the contact structure into multiple distinct layers (metal contacts, intermediate conductive layers, metal oxide channel) rather than using a single homogeneous structure. This segmentation allows each layer to perform its specific function while collectively achieving low contact resistance
Solution Approach 2:
The intermediate conductive layers are strategically positioned only where metal diffusion is most problematic (at the interface between metal contacts and channel), providing localized protection without unnecessarily complicating the entire device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces electrical resistance and prevents the formation of interfacial metal oxides, thereby improving the conductivity and reducing contact resistance in thin film transistors.
Implementation Method 1
forming two intermediate conductive layers in contact with the channel, the two intermediate conductive layers being spaced apart from each other; Each of the two intermediate conductive layers includes at least one stacking unit
Implementation Method 2
Incorporating two intermediate conductive layers, formed through an oxygen-rich process, between the metal oxide channel and the source/drain metal contacts, which are configured as multi-layered structures with predetermined symmetry to reduce oxygen vacancies and minimize metal diffusion
Data Source
AI summary
A method for manufacturing a semiconductor device includes: forming a channel including a semiconductor material; forming two intermediate conductive layers in contact with the channel and spaced apart from each other; and forming two conductive contacts respectively on the two intermediate conductive layers. Each of the intermediate conductive layers includes at least one stacking unit. The at least one stacking unit includes two first metal oxide layers spaced apart from each other and a second metal oxide layer disposed between the two first metal oxide layers and extending along a lengthwise line such that the two first metal oxide layers are opposite to each other relative to the lengthwise line. Each of the first metal oxide layers includes first metal atoms. The second metal oxide layer includes second metal atoms that are different from the first metal atoms.