Metal-Oxide TFT with Nano Micro Structures for Mobility
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Solution Overview
Problem
Conventional oxide semiconductor thin film transistors (TFTs) face limitations in achieving enhanced field-effect mobility, which is crucial for next-generation flat displays requiring low power consumption, high resolution, and favorable space utilization.
Innovation Solution
The method involves forming a metal-oxide semiconductor channel with nano micro structures, such as nano particles or nano pores, in the TFT, where the nano micro structures are separated and embedded within the metal-oxide semiconductor layer, and the inner walls of the nano pores are treated to enhance conductivity, thereby improving field-effect mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxide semiconductor TFT structure is used, then manufacturing simplicity is maintained, but field-effect mobility is insufficient
Solution Approach 1:
The patent introduces a porous layer with nanoscale pores into the oxide semiconductor channel structure. The porous structure increases the effective channel area and improves carrier transport, thereby enhancing field-effect mobility without significantly complicating the manufacturing process
Solution Approach 2:
The patent creates a composite structure combining oxide semiconductor material with a porous layer. This composite channel structure leverages the beneficial properties of both materials: the oxide semiconductor provides semiconducting behavior while the porous structure enhances carrier mobility through increased effective area and improved scattering characteristics
2Reliability
If a-Si TFT is used as switch device, then manufacturing ease is maintained, but field-effect mobility is limited
Solution Approach 1:
The patent changes the physical and structural parameters of the oxide semiconductor channel by introducing a porous layer with controlled pore size, distribution, and morphology. This parameter modification enhances carrier mobility while maintaining compatibility with existing low-temperature fabrication processes
3Reliability
If low temperature polysilicon TFT is used, then threshold voltage uniformity is achieved, but field-effect mobility enhancement is insufficient
Solution Approach 1:
The patent applies porous material structure to the oxide semiconductor channel, creating nanoscale pores that increase the effective channel area and improve carrier transport properties. This structural modification achieves field-effect mobility enhancement comparable to or exceeding low temperature polysilicon TFTs while maintaining the simpler oxide semiconductor material system
Data Source
AI summary
A thin film transistor (TFT) including a gate, a dielectric layer, a metal-oxide semiconductor channel, a source, and a drain is provided. The gate and the metal-oxide semiconductor channel are overlapped. The gate, the source, and the drain are separated by the dielectric layer. Besides, the source and the drain are respectively located on two opposite sides of the metal-oxide semiconductor channel. The metal-oxide semiconductor channel includes a metal-oxide semiconductor layer and a plurality of nano micro structures disposed in the metal-oxide semiconductor layer and separated from one another. In another aspect, a display panel including the TFT and a method of fabricating the TFT are also provided.