Metal Oxide Transistor Oxygen Content Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high reliability, miniaturization, high integration, and high productivity while maintaining favorable electrical characteristics and long data retention with the current manufacturing processes, which often require complex and costly multi-step manufacturing processes for transistors with different electrical characteristics.
Innovation Solution
A semiconductor device structure is proposed that includes two transistors with different electrical characteristics formed over the same layer using metal oxide materials, where the transistors have distinct gate and conductor configurations, including step-like shapes and non-overlapping regions, to achieve enhanced electrical performance without increasing manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complex multi-step manufacturing processes are used to create transistors with different electrical characteristics, then transistor performance can be optimized, but manufacturing complexity and costs increase
Solution Approach 1:
The patent applies parameter changes by adjusting the oxygen content in the metal oxide semiconductor layer to control transistor electrical characteristics. By varying oxygen concentration, the invention achieves different threshold voltages and electrical performances without requiring complex multi-step manufacturing processes, thus resolving the contradiction between transistor performance optimization and manufacturing complexity
Solution Approach 2:
The patent uses a universal metal oxide semiconductor material that can serve multiple functions by simply adjusting its oxygen content. This single material system can produce transistors with different electrical characteristics (e.g., different threshold voltages) without requiring different materials or complex process steps, thereby reducing manufacturing complexity while maintaining transistor performance
2Productivity
If transistor size is reduced for miniaturization and high integration, then device density increases, but maintaining favorable electrical characteristics becomes more difficult
Solution Approach 1:
The patent uses parameter changes in oxygen content to maintain favorable electrical characteristics in miniaturized transistors. By precisely controlling oxygen concentration in the metal oxide semiconductor layer, the invention achieves stable threshold voltages and electrical performance even as transistor dimensions are reduced for higher integration density
Solution Approach 2:
The patent employs metal oxide semiconductors as composite materials that combine the benefits of oxide-based stability with semiconductor functionality. This material choice enables miniaturization while maintaining electrical characteristics, as the metal oxide structure provides both the desired electrical performance and compatibility with small-scale fabrication
3Duration of action of stationary object
If existing manufacturing processes are used for data retention applications, then current technology levels are maintained, but long data retention and high-speed data writing cannot be achieved
Solution Approach 1:
The patent applies parameter changes by controlling oxygen content in the metal oxide semiconductor to optimize both data retention time and data writing speed. By adjusting oxygen concentration, the invention achieves stable electrical characteristics that enable long data retention while maintaining high-speed writing capability, resolving the contradiction between these two performance metrics
Data Source
AI summary
A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.