Metal Oxo Photoresist Dry Development for EUV Pattern Integrity
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Solution Overview
Problem
Current photoresist material systems for EUV lithography suffer from low efficiency, requiring high dosages to achieve the needed solubility switch for development, and face challenges with wet chemistry methods that can lead to pattern collapse and residual byproducts in high aspect ratio features.
Innovation Solution
The development of a metal oxo photoresist using vapor phase thermal etching processes, which eliminates wet byproducts, reduces defects and impurities, and improves line-edge roughness, by reacting halogenating agents, ligands, or organic acids with the photoresist in a vacuum chamber to produce volatile byproducts that are removed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wet chemistry methods are used for photoresist development, then the solubility switch can be achieved, but pattern collapse and residual byproducts occur in high aspect ratio features
Solution Approach 1:
The patent replaces wet chemistry methods with vapor phase thermal etching processes. Instead of using liquid developers that cause pattern collapse, the invention uses vapor phase reactions with halogenating agents, ligands, or organic acids to achieve the solubility switch without liquid contact, thereby eliminating pattern collapse and residual wet byproducts in high aspect ratio features
Solution Approach 2:
The patent changes the physical state parameter from liquid (wet chemistry) to vapor phase. By conducting the development process in vapor phase at controlled temperatures, the invention maintains the chemical reaction capability while eliminating the harmful effects of liquid developers, thus improving pattern integrity and eliminating wet byproducts
2Reliability
If high dosages are used to achieve solubility switch, then the photoresist can be developed, but the efficiency of the lithographic process decreases
Solution Approach 1:
The patent changes the reaction conditions by using vapor phase thermal etching with halogenating agents, ligands, or organic acids. This alternative chemical pathway achieves the solubility switch at lower dosages compared to conventional wet chemistry methods, thereby improving lithographic process efficiency while maintaining reliable pattern development
Solution Approach 2:
The patent substitutes conventional wet chemistry development with vapor phase thermal etching processes. This replacement enables more efficient chemical reactions that achieve complete solubility switch at lower energy dosages, improving overall process productivity without sacrificing development reliability
3Productivity
If conventional development processes are used, then the photoresist can be removed, but defects and impurities remain in the pattern
Solution Approach 1:
The patent replaces conventional wet chemistry development with vapor phase thermal etching processes. This substitution eliminates the introduction of wet byproducts and residual impurities that plague traditional methods, achieving clean pattern development with high manufacturing precision while maintaining efficient processing speeds
Solution Approach 2:
The patent conducts the development process in a vapor phase environment using halogenating agents, ligands, or organic acids. This controlled vapor phase atmosphere prevents contamination from wet chemistry byproducts, resulting in cleaner patterns with fewer defects and impurities while maintaining development productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the efficiency and resolution of the lithographic process, reduces damage to the photoresist, and minimizes waste streams, while maintaining high etch resistance and enabling the formation of thinner, more precise layers.
Implementation Method 1
developing the photopatterned metal oxo photoresist with a thermal dry develop process
Implementation Method 2
pre-treating the photopatterned metal oxo photoresist with a pre-treatment process
Implementation Method 3
post-treating the resist mask with a post-treatment process
Data Source
AI summary
Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.