Metal Oxynitride Semiconductor Thin Film Transistor for High Mobility
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Solution Overview
Problem
Conventional thin film transistors using hydrogenated amorphous silicon exhibit low electron mobility, which compromises their switching characteristics in large-sized and high-quality display devices.
Innovation Solution
A display substrate with a thin film transistor featuring a semiconductor pattern made of metal oxynitride, either heat-treated or plasma-treated, to enhance electron mobility and stability, including a gate wire, semiconductor pattern, and data wire configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogenated amorphous silicon is used as semiconductor pattern, then the thin film transistor can be manufactured with conventional processes, but the electron mobility is low which decreases switching characteristics
Solution Approach 1:
The patent changes the material composition parameters by using metal oxynitride (such as In-Ga-Zn-O-N) instead of conventional hydrogenated amorphous silicon. This material substitution fundamentally alters the semiconductor properties, achieving electron mobility of 10 cm²/Vs or more while maintaining manufacturing feasibility through sputtering deposition and heat treatment processes.
Solution Approach 2:
The patent employs composite material structure by combining multiple metal elements (Indium, Gallium, Zinc) with Oxygen and Nitrogen to form metal oxynitride semiconductor. This composite approach leverages the beneficial properties of each element: Indium provides high mobility, Gallium enhances stability, and Nitrogen incorporation improves crystalline structure, collectively achieving superior electron mobility and switching characteristics.
2Speed
If metal oxynitride semiconductor is used to improve electron mobility, then switching characteristics are enhanced, but additional heat treatment or plasma treatment processes are required
Solution Approach 1:
The patent incorporates Nitrogen during the sputtering deposition process itself, creating metal oxynitride semiconductor layer with improved crystalline structure from the beginning. The subsequent heat treatment at 400-600°C then activates and stabilizes this pre-formed structure, achieving high electron mobility without requiring complex additional plasma treatment or multiple processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the electron mobility and stability of thin film transistors, achieving sheet resistance between 105 Ω/sq to 107 Ω/sq and electron mobility greater than or equal to 10 cm2/V·s, thereby enhancing the switching characteristics of the display substrate.
Implementation Method 1
performing a heat treatment or a plasma treatment on the semiconductor
Implementation Method 2
performing a heat treatment or a plasma treatment on the semiconductor
Data Source
AI summary
A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on the semiconductor pattern to cross the gate wire. The semiconductor pattern has a carrier number density ranging from 1016/cm3 to 1019/cm3.