Metal Particle Layer for Light Extraction Efficiency

The patent applies local quality by creating nanosized irregular structures (protrusions and recesses) on specific regions of the electrode layer surface. These localized structural modifications are formed through selective metal particle deposition using a dip-pen nanolithography method, where conductive ink is deposited in predetermined patterns to create irregularities only in specific areas, thereby reducing total internal reflection at critical interface regions without modifying the entire device structure

The patent transitions from a two-dimensional flat electrode layer surface to a three-dimensional surface with nanosized irregular structures. By adding vertical dimensionality through protrusions and recesses (height variations of 1-100 nm), the light extraction efficiency is improved as these three-dimensional structures disrupt total internal reflection at the gallium nitride-molding material interface

The patent employs a self-service approach by using a dip-pen nanolithography method where the system uses itself to create the desired pattern. The conductive ink solution is deposited directly from a dip-coating process, and the metal particles self-organize and self-align during deposition, eliminating the need for complex photolithography masks or electron beam patterning equipment

The patent replaces complex mechanical fabrication systems (such as photolithography equipment, etching tools, and multiple deposition chambers) with a simple liquid-phase deposition process. The irregular structures are formed by dipping the substrate into a metal particle solution, allowing metal particles to deposit selectively on the electrode layer surface without requiring sophisticated mechanical or optical fabrication equipment