Metal-Containing Photoresist Developer Composition for EUV Lithography
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Solution Overview
Problem
Chemically amplified photoresists face challenges with reduced sensitivity and increased line edge roughness (LER) under extreme ultraviolet (EUV) exposure, requiring improved etching resistance, resolution, and critical dimension uniformity in the semiconductor industry.
Innovation Solution
A metal-containing photoresist developer composition comprising an organic solvent, an acid compound with a pKa1 between 1.0 and 4.8, and an alcohol-based compound, such as diol or cyclic alcohol compounds, is used to form a metal-containing photoresist film, which is then developed to minimize defects and enhance sensitivity and LER.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemically amplified photoresist is used to achieve high sensitivity, then sensitivity is improved, but line edge roughness increases and etching resistance decreases
Solution Approach 1:
The patent changes the chemical parameters of the developer composition by specifying precise pKa ranges (1.0≤pKa1≤4.8) for acid compounds and controlled concentrations of metal compounds (0.01-10 wt%), thereby optimizing the development process to reduce line edge roughness while maintaining sensitivity
Solution Approach 2:
The patent creates a composite developer system combining multiple components: acid compounds (phosphoric, phosphonic, or carboxylic acids), metal compounds (transition metals like Fe, Cu, Zn, or their organometallics), and base compounds, where the synergistic interaction of these components achieves both high sensitivity and reduced LER
2Reliability
If chemically amplified photoresist is used to achieve high sensitivity, then sensitivity is improved, but critical dimension uniformity deteriorates
Solution Approach 1:
The patent optimizes the chemical parameters of the developer composition, specifically controlling the pKa of acid compounds within 1.0≤pKa1≤4.8 and the concentration of metal compounds at 0.01-10 wt%, which improves critical dimension uniformity while maintaining sensitivity
Solution Approach 2:
The patent replaces purely chemical development mechanisms with a hybrid system incorporating metal compound-mediated development, where metal compounds facilitate more uniform and controlled development kinetics, thereby improving CD uniformity
3Reliability
If chemically amplified photoresist is used to achieve high sensitivity, then sensitivity is improved, but etching resistance deteriorates
Solution Approach 1:
The patent modifies the developer composition parameters by controlling metal compound concentration (0.01-10 wt%) and acid compound pKa (1.0≤pKa1≤4.8), which improves etching resistance while preserving the high sensitivity characteristics of chemically amplified photoresist
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables excellent pattern characteristics, reduced line edge roughness, and improved sensitivity, addressing the limitations of chemically amplified photoresists in the semiconductor industry.
Implementation Method 1
an acid compound having 1.0≤pKa1≤4.8, and at least one alcohol-based compound selected from a diol compound derived from an acyclic hydrocarbon and a cyclic alcohol compound
Data Source
AI summary
Disclosed are a metal-containing photoresist developer composition, and a method of forming patterns including a developing step utilizing the metal-containing photoresist developer composition. The metal-containing photoresist developer composition includes an organic solvent, an acid compound having 1.0≤pKa1≤4.8, and at least one alcohol-based compound selected from a diol compound derived from an acyclic hydrocarbon and a cyclic alcohol compound.