Metal Pillar Semiconductor Structure Without Temporary Substrates
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Solution Overview
Problem
Existing semiconductor structures using group III nitride materials face limitations due to defects that restrict their application range, particularly in high energy, high voltage, or high frequency applications, despite the advantages of two-dimensional electron gas and hole gas.
Innovation Solution
A semiconductor device structure with metal pillars and insulating materials, including copper pillars and injection molding, is designed to improve support and reduce substrate influence, allowing for vertical channels and dual conductive channels, enhancing performance and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional semiconductor structures are used, then manufacturing is simpler, but application range is restricted due to defects in high energy, high voltage, or high frequency applications
Solution Approach 1:
The patent transitions from planar device architecture to vertical device architecture by growing semiconductor layers in the vertical direction and forming vertical channels. This dimensional change enables the device to achieve high breakdown electric field strength and high mobility characteristics necessary for high energy, high voltage, and high frequency applications, thereby expanding the application range while maintaining reliability.
Solution Approach 2:
The patent employs composite material structures including group III nitride semiconductor layers (AlN, GaN, InN and their compounds) combined with specific electrode interconnection layer structures. These composite material systems leverage the wide band gap and high breakdown electric field strength of nitride semiconductors to achieve superior performance in high energy, high voltage, and high frequency applications.
2Strength
If metal pillars with large height are used to improve support strength, then substrate removal becomes more difficult and process complexity increases
Solution Approach 1:
The patent forms metal pillars with sufficient height and structural integrity before substrate removal. These pre-formed pillars provide the necessary support strength to maintain device structure during substrate removal, enabling complete substrate removal while preserving device functionality. This preliminary action eliminates the need for temporary substrates and simplifies the overall process.
Solution Approach 2:
The patent divides the support function into discrete metal pillar structures rather than relying on continuous substrate support. The metal pillars are strategically positioned to provide localized support where needed, enabling selective substrate removal while maintaining structural integrity of the device regions requiring support.
3Adaptability or versatility
If substrate is completely removed to reduce substrate influence, then device performance improves, but mechanical support and protection are compromised
Solution Approach 1:
The patent completely removes the substrate to eliminate substrate influence on device performance, extracting only the necessary support function to metal pillars. This extraction enables high-performance operation free from substrate effects while the metal pillars provide targeted mechanical support where structurally necessary.
Solution Approach 2:
The patent introduces metal pillars as intermediary support structures that replace the substrate's mechanical support function. These pillars serve as mediators between the device structure and the mounting substrate, providing mechanical support and protection while allowing complete removal of the original substrate to eliminate its electrical and physical influence on device performance.
Data Source
AI summary
The present disclosure relates to a semiconductor device and a manufacturing method thereof; wherein the semiconductor device comprises a semiconductor device layer including one or more semiconductor devices; a first electrode interconnection layer disposed on a first side of the semiconductor device layer; one or more first metal pillars disposed on the first side of the semiconductor device layer and electrically connected to the first electrode interconnection layer; a first insulating material disposed around the one or more first metal pillars, wherein the first insulating material is an injection molding material; and a second electrode interconnection layer disposed on a second side opposite to the first side of the semiconductor device layer. In the technical scheme of the present disclosure, the temporary substrate is not required to achieve better support strength and complete the related processes of the semiconductor manufacturing process, which is convenient, convenient and low in cost.