Metal-Coordinating Polymer Brushes for Sub-10 Nm DSA Orientation

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Solution Overview

Problem

Conventional lithography techniques face limitations in achieving feature sizes below 10 nm due to aberrations, focus, proximity effects, minimum achievable exposure wavelengths, and maximum achievable numerical apertures, while directed self-assembly of block copolymers is challenging for further miniaturization and orientation control on various substrates.

Innovation Solution

Development of novel graftable polymers with narrow polydispersity and one reactive end group selective to metal substrates, allowing for the formation of polar or non-polar brushes on substrates using spin casting, which facilitate directed self-assembly and orientation control without additional topcoat materials.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography techniques are used, then manufacturing process is well-established, but feature size cannot be reduced below 10 nm due to aberrations, focus, and proximity effects

Engineering Contradiction:
Improvefeature sizeVSAvoidprocessing complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces a neutral layer as an intermediary between the substrate and the block copolymer system. This neutral layer mediates the interaction by providing a controlled interface that enables perpendicular orientation of block copolymer domains, allowing sub-10 nm feature sizes to be achieved while managing the complexity through a standardized intermediate component

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The neutral layer is pre-formed on the substrate before introducing the block copolymer system. This preliminary action establishes the orientation control mechanism in advance, enabling the subsequent self-assembly process to achieve the desired sub-10 nm features without requiring complex real-time control during the lithography process

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If directed self-assembly of block copolymers is used, then feature sizes below 10 nm can be achieved, but additional topcoat materials and processing steps are required

Engineering Contradiction:
Improvefeature sizeVSAvoidprocessing steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The neutral layer serves multiple functions simultaneously: it provides orientation control for perpendicular domain alignment, acts as a release layer to prevent unwanted adhesion, and serves as a platform for the block copolymer self-assembly process. This multi-functionality reduces the need for additional specialized topcoat materials and processing steps

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The block copolymer system performs self-assembly to form the desired nanoscale patterns without requiring external intervention or additional topcoat materials. The neutral layer enables this self-service capability by providing the appropriate interface conditions, allowing the system to automatically achieve sub-10 nm features through spontaneous organization

Inventive Principle:
Principle #25Self-service

3Manufacturing precision

If directed self-assembly is used, then high-resolution patterns with improved CD control can be achieved, but orientation control on various substrates is challenging

Engineering Contradiction:
ImproveCD controlVSAvoidsubstrate compatibility
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The neutral layer provides universal adaptability to various substrate types while maintaining consistent orientation control functionality. It serves as a standardized interface that decouples the substrate-specific properties from the block copolymer self-assembly process, enabling reliable perpendicular domain orientation and CD control across different substrate materials

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of high-resolution patterns with improved CD control and reduced processing steps, enhancing lithographic performance by achieving feature sizes below 10 nm and orienting block copolymer domains perpendicular to the substrate.

Implementation Method 1

polymer brushes with chain-ends functionalized with metal coordinating two hetero elements

Methodology Applied
Scientific EffectMetal coordination: Chemical Bonding

Implementation Method 2

process of forming polar or non-polar brushes on a substrate using these compositions and using these brushes for directed self-assembly

Methodology Applied
Scientific EffectSpin coating: Spin Coating

Data Source

PatentUS20260042873A1Polymer brushes with chain-ends functionalized with metal coordinating two hetero elements for selective surface modification
Publication Date: 2026.02.12 MERCK PATENT GMBH
  • US20260042873A1 patent drawing
  • US20260042873A1 patent drawing
  • US20260042873A1 patent drawing

AI summary

A polymer of structure (A) with two end group R3p, and R4p, and a polymer chain (R) which has either repeat units of structures (Ip) or (IIp). R3p, is either a C-1 to C-8 alkyl, a moiety of structure (IIIp), or a moiety of structure (IIIpI). R3p is a C-1 to C-8 alkyl if the repeat unit is (IIp). R3p is structure (IIIp) or structure (IIIp1) if the repeat unit has (Ip). R4p is either a terminating moiety such as H, a moiety of structure (IVp), a moiety of structure (IVp1), or a moiety of structure (IVp2). R3p and R4p cannot respectively, both simultaneously, be moieties of structure (IIIp) and (IVp), simultaneously be moieties of structure (IIIp) and (IVp1), or simultaneously be moieties of structure (IIIp) and (IVp2). The polymer of structure (A) must contain, one grafting end group moiety selected from structures (IIIp), (IVp), (IVp1) or (IVp2). Composition of this with a solvent are used in DSA processing.