SSA Diffusion in Metal-Based Resist for Self-Aligned Double Patterning
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Solution Overview
Problem
Conventional self-aligned double patterning processes are not compatible with metal-based resists, such as those used in advanced photolithographic processes, and involve complex and costly steps, making them incompatible with high-volume manufacturing.
Innovation Solution
A solubility-shifting agent (SSA) coating composition is used to diffuse inward into a metal-based resist relief pattern, followed by an outward diffusion into an overcoat, altering solubility to form trenches, enabling self-aligned double patterning without additional complex steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional self-aligned double patterning processes are used, then pattern resolution is improved, but process complexity and cost increase significantly
Solution Approach 1:
The invention changes the chemical parameters of the photoresist material by using metal-based resists with specific solubility characteristics. The resist formulation is modified to enable selective dissolution behavior that facilitates self-aligned double patterning without requiring the complex conventional process steps, thereby achieving high pattern resolution while reducing process complexity
Solution Approach 2:
The invention employs composite photoresist materials that combine metal compounds with organic binders to create a resist system with tailored solubility properties. This composite material approach enables the resist to undergo specific chemical transformations during processing that simplify the patterning workflow while maintaining high precision
2Manufacturing precision
If conventional self-aligned double patterning processes are used, then pattern resolution is improved, but manufacturing cost increases
Solution Approach 1:
By modifying the resist material parameters to use metal-based formulations with controlled solubility, the invention eliminates the need for multiple complex processing steps, thereby reducing manufacturing cost while maintaining high pattern resolution
Solution Approach 2:
The metal-based resist system performs self-aligned double patterning through its inherent chemical properties and selective dissolution behavior, eliminating the need for additional alignment and patterning steps that would increase manufacturing cost
3Manufacturing precision
If conventional self-aligned double patterning processes are used, then pattern resolution is improved, but manufacturing throughput decreases
Solution Approach 1:
The metal-based resist automatically performs the self-aligned double patterning function through its chemical properties during normal processing, eliminating additional time-consuming steps and maintaining high manufacturing throughput while achieving improved pattern resolution
Solution Approach 2:
By changing the resist material parameters to enable in-situ patterning behavior, the invention reduces the total process time required for self-aligned double patterning, thereby improving manufacturing throughput without sacrificing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and uniform trench formation compatible with metal-based resists, reducing complexity and cost while maintaining high manufacturing throughput.
Implementation Method 1
A solubility-shifting agent (SSA) coating composition is used to diffuse inward into a metal-based resist relief pattern
Implementation Method 2
followed by an outward diffusion into an overcoat, altering solubility to form trenches
Data Source
AI summary
A solubility-shifting agent (SSA) coating composition includes a solvent and an SSA configured to be diffused inward into a relief pattern from an SSA coating formed from the SSA coating composition. The SSA is configured to remain dormant within the relief pattern during a photolithographic process and diffuse outward from the relief pattern into an overcoat. The relief pattern includes a metal-based resist, a matrix polymer including at least one monomer. The solvent is configured to dissolve the SSA and the matrix polymer, but not the metal-based resist. A method for self-aligned double patterning may use the SSA coating by diffusing the SSA inward into the relief pattern, rinsing the substrate to remove the SSA coating, depositing the overcoat, diffusing the SSA outward into the overcoat to form soluble regions in the overcoat, and developing the substrate to selectively remove the soluble regions.


