Dry Development of Metal-Containing Resist With Fluoride-Chloride Sequencing
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Solution Overview
Problem
Existing methods struggle to appropriately develop metal-containing resists, particularly in semiconductor manufacturing, where selective removal of exposed and unexposed regions is challenging.
Innovation Solution
A dry development method involving the sequential supply of a fluorine-containing gas to form a metal fluoride layer on unexposed regions, followed by a chlorine-containing gas to remove this layer, ensuring selective removal of unexposed regions while preserving exposed regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single processing gas is used for development, then the process is simple, but the selectivity between exposed and unexposed regions is insufficient
Solution Approach 1:
The development process is segmented into two distinct sequential steps: first supplying a fluorine-containing processing gas to react with unexposed metal-containing resist, then supplying a chlorine-containing processing gas to remove the formed metal fluoride layer. This segmentation enables selective removal of unexposed regions while preserving exposed regions, achieving high development selectivity.
Solution Approach 2:
A metal fluoride layer is formed as an intermediary substance during the development process. The fluorine-containing gas first reacts with the metal-containing resist to form this intermediate layer, which is then selectively removed by the chlorine-containing gas. This intermediary mechanism enables controlled selective removal.
2Ease of operation
If conventional development methods are used, then the process is straightforward, but damage to the substrate occurs
Solution Approach 1:
The invention changes the chemical parameters of the processing gases used in development. By using fluorine-containing gas followed by chlorine-containing gas, the process achieves selective removal with reduced substrate damage compared to conventional single-gas methods, while maintaining operational simplicity through sequential gas supply.
3Productivity
If aggressive removal methods are used, then unexposed regions are removed effectively, but in-plane uniformity of the developed pattern deteriorates
Solution Approach 1:
The removal process is segmented into two chemical stages: fluorine reaction to form metal fluoride, then chlorine reaction to remove it. This segmentation enables effective removal of unexposed regions while maintaining in-plane uniformity of the developed pattern through controlled sequential processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables effective and selective development of metal-containing resists, achieving high selectivity and uniformity in the removal process, reducing damage to the substrate, and maintaining high in-plane uniformity of the developed pattern.
Implementation Method 1
supplying a first processing gas including a fluorine-containing gas into the chamber to form a metal fluoride layer on a surface of the second region
Implementation Method 2
supplying a second processing gas including a chlorine-containing gas into the chamber to remove the metal fluoride layer
Data Source
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AI summary
A dry development method includes (a) providing a substrate on a substrate support in a chamber, substrate including an underlying film and a metal-containing resist on the underlying film, the metal-containing resist including an exposed first region and an unexposed second region, (b) supplying a first processing gas including a fluorine-containing gas into the chamber to form a metal fluoride layer on a surface of the second region, and (c) supplying a second processing gas including a chlorine-containing gas into the chamber to remove the metal fluoride layer.