Metal-Sensitized Resist Upper Layer Film for EUV Sensitivity
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Solution Overview
Problem
EUV lithography faces challenges with low sensitivity due to the low output of EUV light sources, and existing methods to improve sensitivity, such as forming a metal-containing top coat, lack specific examples and implementation details.
Innovation Solution
A resin composition for forming a resist upper layer film containing sensitizing elements like Ge, Mo, Hf, Zr, Ta, W, Cr, Co, Fe, Pt, Sn, and Sb, with a concentration of 5 at % or more, which generates secondary electrons to enhance photoresist solubility, and includes a polysiloxane-based resin with alkali-soluble groups for easy removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal-containing top coat is formed to improve sensitivity in EUV lithography, then sensitivity is improved, but the complexity of the process and material preparation increases
Solution Approach 1:
The invention changes the chemical composition parameters of the upper layer film by incorporating specific metal compounds (germanium tetraethoxide, silicotungstic acid, or bis[2-carboxyethylgermanium(IV)] sesquioxide) at controlled concentrations (0.01-10 at% based on total non-volatile components). This parameter optimization enables sensitivity improvement while maintaining process feasibility, resolving the contradiction between reliability improvement and process complexity.
Solution Approach 2:
The invention creates a composite resin composition combining organic resin with metal-containing compounds to form an upper layer film. This composite structure integrates the sensitivity-enhancing metal compounds with the functional resin matrix, achieving both improved sensitivity and practical processability without requiring separate metal deposition steps.
2Reliability
If the amount of sensitizing element is increased to improve sensitivity, then sensitivity is improved, but the resin composition becomes more complex and harder to control
Solution Approach 1:
The invention establishes specific parameter ranges for the sensitizing element content (0.01-10 at%, preferably 0.1-5 at%) and defines precise compositional ratios between different components. These parameter specifications enable systematic optimization of sensitivity while maintaining compositional control and manufacturability, resolving the contradiction between reliability improvement and composition complexity.
Solution Approach 2:
The invention applies local quality by concentrating the sensitizing metal compounds specifically in the upper layer film region rather than uniformly throughout the entire resist structure. This localized composition strategy improves sensitivity at the critical interface while keeping the overall composition simple and controllable.
3Ease of manufacture
If a polysiloxane-based resin with alkali-soluble groups is used, then ease of removal is improved, but the resin composition becomes more specific and harder to synthesize
Solution Approach 1:
The invention specifies particular chemical parameters for the resin structure, including the use of polysiloxane-based resins with alkali-soluble groups (such as carboxyl groups) and controls the metal compound content within defined ranges. These parameter specifications enable easy removal during development while providing clear synthesis guidelines, resolving the contradiction between ease of manufacture and synthesis complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resin composition improves sensitivity in EUV lithography by promoting secondary electron generation and solubility changes in the photoresist film, allowing for better pattern formation without altering the photoresist itself.
Implementation Method 1
improve sensitivity in EUV lithography by promoting secondary electron generation
Data Source
AI summary
Provided is a resin composition for forming a resist upper layer film including one or more sensitizing elements selected from the group consisting of Ge, Mo, Hf, Zr, Ta, W, Cr, Co, Fe, Pt, Sn, and Sb, in which an amount of the sensitizing element in non-volatile components is 5 at % or more. Also provided is a method for forming a pattern including a step of forming a photoresist film over a substrate, a step of forming a resist upper layer film over the photoresist film using the resin composition for forming a resist upper layer film, an exposing step of exposing the photoresist film and the resist upper layer film, and a step of removing at least a part of the photoresist film using a developer.