Metal-Containing Resist Film Gradient for Consistent EUV Patterning
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Solution Overview
Problem
Existing techniques for forming thin films on semiconductor substrates using extreme ultraviolet light (EUV) do not effectively address the variation in exposure sensitivity and development resistance across the thickness of the resist film, leading to inconsistencies in pattern formation.
Innovation Solution
A method involving the formation of a metal-containing resist film with a composition ratio of metal that changes stepwise or continuously, using alternating gas flows and temperature adjustments to create a first and second resist film with different metal compositions, followed by exposure and development to form distinct regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a uniform metal-containing resist film is formed on the underlayer film, then the film formation process is simple, but exposure sensitivity and development resistance vary across the thickness of the resist film, leading to pattern formation inconsistencies
Solution Approach 1:
The resist film is divided into multiple layers (first resist film and second resist film) with different metal composition ratios. The first resist film has a higher metal composition ratio than the second resist film, creating a gradient structure that controls exposure sensitivity and development resistance at different depths, thereby achieving consistent pattern formation throughout the film thickness.
Solution Approach 2:
Different regions of the resist film (first and second resist films) are given different metal composition ratios to provide locally optimized properties. The first resist film with higher metal content provides enhanced exposure sensitivity, while the second resist film with lower metal content provides appropriate development resistance, ensuring uniform pattern formation across the entire film structure.
Data Source
AI summary
A substrate processing method includes providing a substrate having an underlayer film and forming a metal-containing resist film on the underlayer film. The forming a metal-containing resist film includes forming a first resist film containing a metal on the underlayer film, and forming a second resist film containing the metal in a composition ratio different from the composition ratio of the metal in the first resist film on the first resist film.